RoHS
S115
COMPLIANT
肖特基二极管 Schottky Rectifier
■特征 Features
●
Io
■外形尺寸
Outline Dimensions and Mark
1.0A
SOD-123FL
VRRM
150V
● 低正向电压,低功耗
●
Low VF,Low power loss
.154(3.90)
.142(3.60)
.047(1.20)
.039(1.00)
.002(0.05)
.001(0.02)
整流用
Rectifier
.010(0.25)
.004(0.10)
O
●
Applications
.112(2.85)
.100(2.55)
.043(1.10)
.035(0.90)
耐正向浪涌电流能力高
High surge forward
current capability
● 芯片尺寸
53mil
Chip Dice 53mil
●
■用途
.035(0.90)
.016(0.40)
.075(1.90)
.063(1.60)
Limiting Values(Absolute Maximum Rating)
Junction Temperature
VRRM
V
IO
A
IFSM
Tstg
Tj
条件
Conditions
TE
单位
Unit
60Hz单向半波,电阻负载,Ta=75℃
60Hz One-way half-wave, R-load,Ta=75℃
60HZ正弦波,一个周期,Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
A
S115
150
1.0
65
℃
-55 ~+150
℃
-55 ~+150
LY
Storage Temperature
结温
符号
Symbol
FO
R
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output Current
正向(不重复)浪涌电流
Surge(Non-repetitive) Forward
Current
存储温度
NP
A
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
抗静电能力
Electrostatic Discharge
结电容(典型)
Typical junction capacitance
ON
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
符号
Symbol
单位
Unit
测试条件
Test Condition
S115
VFM
V
IFM=1.0A
0.9
IRRM
mA
VRM=VRRM , Ta=25℃
0.1
RθJ-L
℃/W
ESD
Cj
结和引线之间
Between junction and lead
IEC-61000-4-2 ,接触式
IEC-61000-4-2 ,Contact mode
KV
pF
IEC-61000-4-2,空气放电(1)
IEC-61000-4-2,Air discharge(1)
Measured at 1MHZ and Applied Reverse Voltage of
4.0 V.D.C.
5
8
15
58
注1.把静电枪靠近被测器件本体用仪器地与静电枪接触放电
S-S1075
Rev1.0, 17-Feb-17
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S115
图 1 : Io-Ta 曲线
FIG1:Io-Ta Curve
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
IFSM(A)
Io(A)
■特性曲线(典型) Ch racteristics(Typical)
1.2
70
1.0
8.3ms 正弦半波
8.3ms Single Half Sine Wave
JEDEC Method
60
50
0.8
40
0.6
30
0.4
10
0
80
IR(mA)
4
2
2
5
10
20
50
100
Number of Cycles
图 4: 反 向 电 流 曲 线
F IG 4 :T y p ic a l R e v e rs e C h a ra c te ris tic s
1000
FO
R
IF(A)
图3:正向电压曲线
FIG3: Forward Voltage
6
1
160
Ta ℃ )
120
NP
A
40
TE
0
O
0.2
0
20
单相半波60Hz
电阻负载
Single Phase
Half Wave 60Hz
Resistive Load
T j= 1 0 0 ℃
100
LY
1
S115
10
ON
0.5
0.1
1 .0
0.05
0 .1
T j= 2 5 ℃
0.02
Ta=25℃
0.01
0.2
0.4
S-S1075
Rev1.0, 17-Feb-17
0.6
0.8
1.0
1.2
VF(V)
0 .0 1
0
20
40
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
60
80
100
V o lta g e (% )
www.21yangjie.com
S115
ON
LY
FO
R
TE
NP
A
O
■芯片图片 Die Photo
S-S1075
Rev1.0, 17-Feb-17
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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