RoHS
YJG30N06A
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS= 10V)
● RDS(ON)( at VGS= 4.5V)
60V
30A
<20mohm
<23mohm
General Description
● Trench Power MV MOSFET technology
●High density cell design for Low RDS(ON)
● High Speed switching
Applications
● DC-DC Converters
● Power management functions
● Backlighting
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
±20
V
TC=25℃
Drain Current
30
ID
TC=100℃
Unit
A
19
Pulsed Drain Current A
IDM
130
A
Total Power Dissipation @ TC=25℃
PD
30
W
Single Pulse Avalanche Energy B
EAS
100
mJ
Thermal Resistance Junction-to-Case
RθJC
5
℃/ W
TJ ,TSTG
-55~+150
℃
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJG30N06A
F1
YJG30N06A
5000
10000
100000
13“ reel
1/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
60
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
1
μA
IGSS
VGS= ±20V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.5
2.5
V
16
20
Static Drain-Source On-Resistance
RDS(ON)
Static Parameter
Gate-Body Leakage Current
1.0
VGS= 10V, ID=15A
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous Current
V
mΩ
VGS= 4.5V, ID=10A
17.5
23
IS=10A,VGS=0V
0.85
1.2
V
30
A
IS
Dynamic Parameters
Input Capacitance
Ciss
2027
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
116
Total Gate Charge
Qg
51
Gate-Source Charge
Qgs
VDS=30V,VGS=0V,f=1MHZ
132
pF
Switching Parameters
VGS=10V,VDS=30V,ID=10A
8.1
nC
Gate-Drain Charge
Qgd
Reverse Recovery Charge
Qrr
11.4
11.4
IF=20A, di/dt=500A/us
Reverse Recovery Time
trr
22
Turn-on Delay Time
tD(on)
11
Turn-on Rise Time
tr
Turn-off Delay Time
tD(off)
Turn-off fall Time
VGS=10V, VDD=30V, ID=2A,
RGEN=3Ω
tf
21
ns
40
23
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2 pad of 2oz copper.
2/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
■ Typical Performance Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance vs. Junction Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge
3/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
Figure 8. Maximum Continuous Drain Current
vs Case Temperature
Figure 7. Safe Operation Area
Figure 9. Normalized Maximum Transient Thermal Impedance
4/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
■PDFN5X6 Package information
6/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJG30N06A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
7/7
S-E633
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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