YJM04N10A

RoHS YJM04N10A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS= 10V) ● RDS(ON)( at VGS= 4.5V) 100V 4.0A ＜110mohm ＜120mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V TA=25℃ Drain Current 4 ID TA=70℃ Unit A 3.2 Pulsed Drain Current A IDM 16 A Total Power Dissipation @ TA=25℃ PD 2.5 W Thermal Resistance Junction-to-Ambient B RθJA 50 ℃/ W Thermal Resistance Junction-to-Case RθJC 16 ℃/ W TJ ,TSTG -55～+150 ℃ Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJM04N10A F2 1004 2500 / 40000 7“ reel 1/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.8 3.0 V 95 110 Static Drain-Source On-Resistance RDS(ON) Static Parameter Gate-Body Leakage Current 1.1 VGS= 10V, ID=4A Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V mΩ VGS= 4.5V, ID=3.2A 100 120 IS=4A,VGS=0V 0.8 1.2 V 4 A IS Dynamic Parameters Input Capacitance Ciss 1070 Output Capacitance Coss Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg 26 Gate-Source Charge Qgs VDS=50V,VGS=0V,f=1MHZ 33 pF Switching Parameters VGS=10V,VDS=50V,ID=10A 5.4 nC Gate-Drain Charge Qgd Reverse Recovery Charge Qrr 5.8 30.1 IF=10A, di/dt=100A/us Reverse Recovery Time trr 40 Turn-on Delay Time tD(on) 7 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=10V,VDD=50V,RL=6.4Ω RGEN=3Ω tf 24 ns 24 31 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A Figure 7. Safe Operation Area Figure 8. Maximum Continuous Drain Current vs Ambient Temperature Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A ■ SOT-223 Package information 6/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJM04N10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E638 Rev.3.0,18-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com