620

FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collector Current SOT23 package SOT23 APPLICATIONS DC - DC Modules Power Management Functions CCFL Backlighting Inverters Motor control and drive functions E C B TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ORDERING INFORMATION DEVICE FMMT620TA FMMT620TC REEL SIZE (inches) 7 13 DEVICE MARKING 620 ISSUE 2 - JUNE 2006 1 SEMICONDUCTORS FMMT620 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 80 80 5 5 1.5 500 625 5 806 6.4 -55 to +150 UNIT V V V A A mA mW mW/°C mW mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 2 - JUNE 2006 SEMICONDUCTORS 2 FMMT620 TYPICAL CHARACTERISTICS 10 0.7 Max Power Dissipation (W) IC Collector Current (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 1 DC 1s 100ms 10ms 1ms 100µs Single Pulse Tamb=25°C 100m 10m 100m 1 10 100 VCE Collector-Emitter Voltage (V) Temperature (°C) Safe Operating Area 200 Derating Curve Thermal Resistance (°C/W) 150 D=0.5 100 D=0.2 Single Pulse D=0.05 D=0.1 50 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 2 - JUNE 2006 3 SEMICONDUCTORS FMMT620 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 15 45 145 160 0.86 0.82 200 300 110 60 20 100 450 450 170 90 30 10 160 11.5 86 1128 18 MIN. 100 80 7 TYP. 180 110 8 100 100 100 20 60 185 200 1.0 0.95 900 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS . I C =100 A I C =10mA* I E =100 A V CB =80V V EB =5.5V V CES =80V I C =0.1A, I B =10mA* I C =0.5A, I B =50mA* I C =1A, I B =20mA* I C =1.5A, I B =50mA* I C =1.5A, I B =50mA* I C =1.5A, V CE =2V* I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* MHz pF ns ns I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =500mA I B1 =I B2 =25mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ISSUE 2 - JUNE 2006 SEMICONDUCTORS 4 FMMT620 TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2006 5 SEMICONDUCTORS FMMT620 PACKAGE DIMENSIONS PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters DIM A B C D F G 0.37 0.085 Min 2.67 1.20 Max 3.05 1.40 1.10 0.53 0.15 0.015 0.0034 Inches Min 0.105 0.047 Max 0.120 0.055 0.043 0.021 0.0059 DIM H K L M N Millimeters Min 0.33 0.01 2.10 0.45 Max 0.51 0.10 2.50 0.64 Inches Max 0.013 0.0004 0.083 0.018 Max 0.020 0.004 0.0985 0.025 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM © Zetex Semiconductors plc 2006 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2006 SEMICONDUCTORS 6