BCW66G

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – 7P 5T 7M BCW66 E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current(10ms) Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC I CM IB P tot T j:T stg VALUE 75 45 5 800 1000 100 330 -55 to +150 UNIT V V V mA mA mA mW °C TBA BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer SYMBOL MIN. V (BR)CEO 45 V (BR)CES V (BR)EBO I CES I EBO V CE(sat) V BE(sat) 75 100 35 110 160 60 180 250 100 100 8 12 80 2 10 75 5 20 20 20 TYP. MAX. UNIT CONDITIONS. V V V nA µA nA I CEO=10mA IC=10 µ A I EBO = 10 µ A V CES = 4 5V VCES = 45V , Tamb=150°C V EBO = 4V IC=100mA, IB = 10mA IC= 500mA, IB = 50mA* IC=500mA, IB=50mA* I C= 10mA, V CE = 1V IC=100mA, VCE= 1V* IC=500mA, VCE = 2V* I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* MHz I C = 20mA, V CE = 10V f = 100MHz pF pF dB VCB =10V, f =1MHz VEB =0.5V, f =1MHz IC= 0.2mA, VCE = 5V RG =1kΩ I C=150mA I B1=- I B2 = 15mA R L=150 Ω 0 .3 V 0.7 V 2 V BCW66F h FE 160 250 BCW66G h FE 250 400 BCW66H h FE 350 630 Transition Frequency Output Capacitance Input Capacitance Noise Figure fT C obo C ibo N Switching times: Turn-On Time Turn-Off Time t on t off 100 400 ns ns S pice parameter data is available upon request for this device *Measured under pulsed conditions. TBA