BCX71

SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 – MARCH 2005 PARTMA RKING D ETA IL – BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J 8 BCX71KR – CK BCX71 E C B ABSOLUTE MA XIMU M RATINGS. PARAM ETER Col l ect or-Base Vol t age Colle ct or-Em i tte r Volta ge Em itte r-Base Volta ge Cont in uous Colle ctor Curr ent Base Curre nt Pow er Di ssip at io n at Tamb =25°C Operati ng an d St orage Tem perat ure Range SYM BOL VCES VCEO VEBO IC IB PTOT Tj:Tstg +VBB SOT23 VALUE -45 -45 -5 -200 -50 330 -55 t o +150 VCC (-10V) UNIT V V V mA mA mW °C SW IT CHI NG CI RCUI T R2 1µs -10V tr 100kΩ Oscilloscope FOUR TERM INAL NETWORK DATA ( IC =2m A, VCE =5V, f =1k Hz) hFEGrou p G hFEGrou p F hFEGroup M i n. Typ. M ax. M i n. Typ M ax. M i n. Typ 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 1.5 2 2 200 260 330 18 30 24 50 30 J h FEGroup K M ax. M i n. Typ M ax. 8.5 4.5 7.5 12 K 3 10-4 520 60 50 100 µs h11e h12e h21e h22e Spic e p aram et er d at a is av ailable up on r eques t f o r th is dev ic e BCX71 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CEO V(BR)EBO ICES IEBO VCE(sat) VBE(sat) VBE -0.60 -0.68 -0.6 120 60 30 180 80 40 250 100 100 380 110 fT Cebo Ccbo N 2 -0.12 -0.25 -0.70 -0.80 -0.55 -0.65 -0.72 140 170 200 250 270 350 340 500 180 11 6 6 MIN. -45 -5 -20 -20 -20 -0.25 -0.55 -0.85 -1.05 -0.75 220 310 460 630 MHz pF pF dB TYP. MAX. UNIT V V µA SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – CONDITIONS. ICEO=-2mA IEBO=-1µA VCES =-45V VCES =-45V ,Tamb=150oC VEBO =-4V IC=-10mA,IB= -0.25mA IC=-50mA, IB =-1.25mA IC =-10mA, IB=-0.25mA IC =-50mA, IB=-1.25mA IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC=-10µA, VCE =-5V IC=-2mA, VCE =-5V IC=-50mA, VCE =-1V IC =-10mA, VCE = -5V f = 100MHz VEBO= -0.5V,f =1MHz VCBO = -10V, f =1MHz IC =- 0.2mA, VCE =- 5V RG=2KΩ, f=1KHz ∆f=200Hz -IC : IB1 : - IB2 =10:1:1mA R1=R2=5KΩ VBB =-3.6V, RL=990Ω BCX71G – BG BCX71H – BH BCX71J – BJ BCX71K – BK BCX71GR – CG BCX71HR – 6P BCX71JR – J8 BCX71KR – CK BCX71 E C B Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base - Emitter Voltage Static Forward Current Transfer Ratio nA nA V V V V V V V ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCES VCEO VEBO IC IB PTOT Tj:Tstg +VBB SOT23 VALUE -45 -45 -5 -200 -50 330 -55 to +150 VCC (-10V) UNIT V V V mA mA mW °C BCX71G BCX71H hFE SWITCHING CIRCUIT BCX71J BCX71K Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Noise Figure Switching times: Delay Time Rise Time Turn-on Time Storage Time Fall Time Turn-Off Time R2 1µs -10V tr 100kΩ Oscilloscope FOUR TERMINAL NETWORK DATA (IC=2mA, VCE=5V, f=1kHz) hFE Group G hFE Group F hFE Group J hFE Group K Min. Typ. Max. Min. Typ Max. Min. Typ Max. Min. Typ Max. 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 K 1.5 2 2 3 10-4 200 260 330 520 18 30 24 50 30 60 50 100 µs td tr ton ts tf toff 35 50 85 400 80 480 150 800 ns ns ns ns ns ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle h11e h12e h21e h22e Spice parameter data is available upon request for this device PAGE NO