BSR41

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 7 COMPLEMENTARY TYPES – BSR43 - BSR33 BSR41 - BSR31 PARTMARKING DETAIL – BSR43 - AR4 BSR41 - AR2 BSR41 BSR43 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB PTOT Tj:Tstg BSR41 70 60 5 2 1 100 1 -65 to +150 90 80 SOT89 BSR43 UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER Collector-Base BSR43 Breakdown Voltage BSR41 Collector-Emitter BSR43 Breakdown Voltage BSR41 Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitance Transition Frequency Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE 30 100 50 MIN. 90 70 80 60 5 100 50 0.25 0.5 1.0 1.2 300 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V nA µA V V V V CONDITIONS. IC=100µA IC=10mA IE=10µA VCB=60V VCB=60V, Tamb =125°C IC =150mA, IB =15mA IC =500mA, IB =50mA IC =150mA, IB =15mA IC =500mA, IB =50mA IC =100µA, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V VCB =10V, f=1MHz VEB =0.5V, f=1MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =IB2 =5mA * Cc Ce fT Ton Toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 68