FXT449

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT449 B C E REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 50 30 5 2 1 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 50 30 5 0.1 10 0.1 0.5 1 1.25 1 70 100 80 40 150 15 3-30 300 MHz pF TYP. MAX. UNIT V V V µA µA µA CONDITIONS. IC=100µA, IE=0 IC=10mA, IB=0* IE=100µA, IC=0 VCB=40V VCB=40V, Tamb=100°C VEB=4V, IC=0 IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A,VCE=2V* IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz Collector Cut-Off Current ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance IEBO VCE(sat) VBE(sat) VBE(on) hFE V V V V fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%