FZT690

FZT690B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB=10 IC/IB=100 Tamb=25°C 0.8 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters PARTMARKING DETAIL – FZT690B FZT690B C -55°C +25°C +100°C +175°C IC/IB=100 E C B VALUE 45 45 5 6 3 2 -55 to +150 UNIT V V V A A W °C - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V 0.2 0.2 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 0 0.01 0.1 1 10 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100°C +25°C -55°C VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6 - Normalised Gain -55°C +25°C +100°C +175°C Operating and Storage Temperature Range IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-EmitterBreakdown Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V(BR)CBO 45 V(BR)CEO 45 V(BR)EBO 5 ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 50 150 200 16 33 1300 1K - Typical Gain - (Volts) SYMBOL MIN. TYP. MAX UNIT CONDITIONS. . V V V 0.1 0.1 0.1 0.5 0.9 0.9 µA µA IC=100µ A IC=10mA* IE=100µ A VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* 500 V h 0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 V V V V - (Volts) 1.2 1.0 0.8 1 DC 1s 100ms 10ms 1ms 100µs 0.6 0.4 0.2 0 0.1 V 0 0.01 0.1 0.01 0.1 1 10 fT Cibo Cobo ton toff MHz IC=50mA,VCE=5V,f=50MHz pF pF ns ns VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V 1 10 100 Input Capacitance Output Capacitance Switching Times I+ - Collector Current (Amps) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 222 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 221 FZT690B TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB=10 IC/IB=100 Tamb=25°C 0.8 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters PARTMARKING DETAIL – FZT690B FZT690B C -55°C +25°C +100°C +175°C IC/IB=100 E C B VALUE 45 45 5 6 3 2 -55 to +150 UNIT V V V A A W °C - (Volts) 0.6 - (Volts) 0.6 0.4 0.4 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage 0.01 0.1 1 10 V V 0.2 0.2 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 0 0.01 0.1 1 10 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100°C +25°C -55°C VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6 - Normalised Gain -55°C +25°C +100°C +175°C Operating and Storage Temperature Range IC/IB=100 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-EmitterBreakdown Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V(BR)CBO 45 V(BR)CEO 45 V(BR)EBO 5 ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 50 150 200 16 33 1300 1K - Typical Gain - (Volts) SYMBOL MIN. TYP. MAX UNIT CONDITIONS. . V V V 0.1 0.1 0.1 0.5 0.9 0.9 µA µA IC=100µ A IC=10mA* IE=100µ A VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA,VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=3A, VCE=2V* 500 V h 0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h 0 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55°C +25°C +100°C +175°C VCE=2V 10 V V V V - (Volts) 1.2 1.0 0.8 1 DC 1s 100ms 10ms 1ms 100µs 0.6 0.4 0.2 0 0.1 V 0 0.01 0.1 0.01 0.1 1 10 fT Cibo Cobo ton toff MHz IC=50mA,VCE=5V,f=50MHz pF pF ns ns VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V 1 10 100 Input Capacitance Output Capacitance Switching Times I+ - Collector Current (Amps) VBE(on) v IC VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 222 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 221