FZT751

FZT751 TYPICAL CHARACTERISTICS 0.6 td tr tf ts ns 700 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – PARAMETER FZT651 FZT751 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. UNIT V V V -0.1 -10 -0.1 0.3 0.6 -1.25 -1.0 300 MHz ns ns 30 pF µA µA µA FZT751 C IB1 =IB2=IC/10 0.5 ns 140 E C B - (Volts) 0.4 IC /I B =10 120 600 ts td Switching time 100 500 0.3 tf 80 400 tr 0.2 V 60 300 40 200 ABSOLUTE MAXIMUM RATINGS. VALUE -80 -60 -5 -6 -3 2 -55 to +150 CONDITIONS. IC=-100µA IC=-10mA* IE=100µA VCB=-60V VCB=-60V,T =100°C VEB=-4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* amb 0.1 20 100 UNIT V V V A A W °C 0 0.0001 0.001 0.01 0.1 1 10 0 0 0.1 1 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range I - Collector Current (Amps) C I - Collector Current (Amps) C VCE(sat) v IC Switching Speeds 1.4 225 1.2 175 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC /I B=10 VCE =2V 1.0 125 0.8 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 I - Collector Current (Amps) C I - Collector Current (Amps) C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO -80 V(BR)CEO V(BR)EBO -60 -5 h - Gain V ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 100 -0.15 -0.45 -0.9 -0.8 200 200 170 150 140 40 450 hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25°C 1.2 1 - (Volts) 1.0 VC E=2V 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100µs Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE =-5V f=100MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA VCB=-10V, f=1MHz V 0.4 0.0001 0.01 fT ton toff Cobo 0.001 0.01 0.1 1 10 0.1 1 10 100 I - Collector Current (Amps) C VCE - Collector Emitter Voltage (V) Switching Times Output Capacitance VBE(on) v IC Safe Operating Area 3 - 235 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 234 FZT751 TYPICAL CHARACTERISTICS 0.6 td tr tf ts ns 700 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – PARAMETER FZT651 FZT751 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. UNIT V V V -0.1 -10 -0.1 0.3 0.6 -1.25 -1.0 300 MHz ns ns 30 pF µA µA µA FZT751 C IB1 =IB2=IC/10 0.5 ns 140 E C B - (Volts) 0.4 IC /I B =10 120 600 ts td Switching time 100 500 0.3 tf 80 400 tr 0.2 V 60 300 40 200 ABSOLUTE MAXIMUM RATINGS. VALUE -80 -60 -5 -6 -3 2 -55 to +150 CONDITIONS. IC=-100µA IC=-10mA* IE=100µA VCB=-60V VCB=-60V,T =100°C VEB=-4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* amb 0.1 20 100 UNIT V V V A A W °C 0 0.0001 0.001 0.01 0.1 1 10 0 0 0.1 1 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range I - Collector Current (Amps) C I - Collector Current (Amps) C VCE(sat) v IC Switching Speeds 1.4 225 1.2 175 - (Volts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC /I B=10 VCE =2V 1.0 125 0.8 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 I - Collector Current (Amps) C I - Collector Current (Amps) C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO -80 V(BR)CEO V(BR)EBO -60 -5 h - Gain V ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 100 -0.15 -0.45 -0.9 -0.8 200 200 170 150 140 40 450 hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25°C 1.2 1 - (Volts) 1.0 VC E=2V 0.8 0.1 0.6 DC 1s 100ms 10ms 1ms 100µs Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency V V V V IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE =-5V f=100MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA VCB=-10V, f=1MHz V 0.4 0.0001 0.01 fT ton toff Cobo 0.001 0.01 0.1 1 10 0.1 1 10 100 I - Collector Current (Amps) C VCE - Collector Emitter Voltage (V) Switching Times Output Capacitance VBE(on) v IC Safe Operating Area 3 - 235 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 234