MMBT3906GH

Z owie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type 3 BASE 1 2 2 EMITTER COLLECTOR 3 1 MMBT3906GH MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous SOT-23 Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=-1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= -10 uAdc, IE=0 ) Emitter-Base Breakdowe Voltage ( IE= -10 uAdc, IC=0 ) Base Cutoff Current ( VCE= -30 Vdc, VEB= -3.0 Vdc ) Collector Cutoff Current ( VCE= -30 Vdc, VEB= -3.0 Vdc ) (3) V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc REV. 0 Zowie Technology Corporation Z owie Technology Corporation MMBT3906GH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit (3) o ON CHARACTERISTICS DC Current Gain ( IC= -0.1 mAdc, VCE= -1.0 Vdc ) ( IC= -1.0 mAdc, VCE= -1.0 Vdc ) ( IC= -10 mAdc, VCE= -1.0 Vdc ) ( IC= -50 mAdc, VCE= -1.0 Vdc ) ( IC= -100 mAdc, VCE= -1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC= -10 mAdc, IB=-1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc ) Base-Emitter Saturation Voltage ( IC= -10 mAdc, IB= -1.0 mAdc ) ( IC= -50 mAdc, IB= -5.0 mAdc ) (3) (3) HFE 60 80 100 60 30 300 - - VCE(sat) - -0.25 -0.4 Vdc VBE(sat) -0.65 - -0.85 -0.95 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ ) Output Capacitance ( VCB= -5.0 Vdc, IE=0, f=1.0 MHZ ) Input Capacitance ( VEB= -0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) Voltage Feedback Ratio ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) Small-Signal Current Gain ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) Output Admittance ( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) Noise Figure ( VCE= -5.0 Vdc, IC= -100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) fT 250 MHZ Cobo - 4.5 pF Cibo - 10 pF hie 2.0 12 k ohms hre 0.1 10 X 10 -4 hfe 100 400 - hoe 3.0 60 u mhos NF - 4.0 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ( VCC= -3.0 Vdc, VBE= -0.5 Vdc, IC= -10 mAdc, IB1= -1.0 mAdc ) ( VCC= -3.0 Vdc, IC= -10 mAdc, IB1=IB2= -1.0 mAdc ) td tr ts tf 35 35 225 75 nS nS (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle REV. 0 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBT3906GH 3V +9.1 V 275 < 1 ns ±0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1< 500us DUTY CYCLE = 2% 1N916 t1 10.9 V 10 k < 1 ns 3V 275 CS < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5000 3000 2000 5.0 Cobo Cibo VCC=40 V IC/IB=10 TJ=25 C TJ=125 C o o CAPACITANCE ( pF ) Q, CHARGE (pC) 1000 700 500 300 200 100 70 3.0 2.0 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 3. Capacitance Figure 4. Charge Data 500 300 200 100 IC/IB=10 500 300 200 VCC=40 V IB1=IB2 tr, RISE TIME ( ns ) 100 70 50 30 20 10 7 5 IC/IB=20 TIME (ns) 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 td @ VOB=0 V tr @ VCC=3.0 V 15 V IC/IB=10 40 V 2.0 V 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time Figure 6. Fall Time REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT3906GH TYPICAL TRANSIENT CHARACTERISTICS NOISE FIGURE VARIATIONS o (VCE= -5.0Vdc, TA=25 C, Bandwidth=1.0HZ) 5.0 12 SOURCE RESISTANCE=200 IC=1.0 mA NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) f = 1.0 KHZ IC =1.0 mA 4.0 SOURCE RESISTANCE=200 IC=0.5 mA 10 8 6 4 3.0 SOURCE RESISTANCE=2.0 K IC=50uA IC =0.5 mA IC =100 uA 2.0 IC =50 uA 1.0 SOURCE RESISTANCE=2.0 K 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE ( k OHMS ) Figure 7. h PARAMETERS o (VCE= -10Vdc, f=1.0 kHZ, TA=25 C) 300 100 Figure 8. hoe, OUTPUTADMITTANCE (umhos) 5.0 10 hfe, DC CURRENT GAIN 200 50 30 20 100 70 50 10 7 5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 9. Current Gain Figure 10. Output Admittance hre, VOLTAGE FEEDBACK RATIO(X 10-4) 5.0 10 20 10 7.0 5.0 3.0 2.0 hie, INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT3906GH TYPICAL STATIC CHARACTERISTICS hFE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125 C o 1.0 0.7 0.5 0.3 0.2 TJ = +25 C o VCE=1.0V TJ = -55 C o 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 13. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25 C o 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) Figure 14. Collector Saturation Region VBE(sat) @ IC/IB=10 TEMPERATURE COEFFICIENTS (mV / C) 1.0 1.0 +25 C to +125 C o o o 0.8 0.5 VC V, VOLTAGE ( VOLTS ) VBE @ ICE=1.0 V FOR VCE(sat) 0 -55 C to +25 C o o 0.6 -0.5 -55 C to +25 C o o 0.4 -1.0 +25 C to +125 C VB o o 0.2 FOR VBE(sat) VCE(sat) @ IC/IB=10 -1.5 -2.0 0 1.0 2.0 5.0 10 20 50 100 200 V, 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage Figure 16. Temperature Coefficients REV. 0 Zowie Technology Corporation