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AV2222

AV2222

  • 厂商:

    AVICTEK

  • 封装:

  • 描述:

    AV2222 - Amplifier Transistors PN Silicon - Avic Technology

  • 数据手册
  • 价格&库存
AV2222 数据手册
@vic AV2222 Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2222 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.5 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C TO–92 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO — — IEBO ICEO IBEX — — — 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 — — — — 10 Vdc Vdc Vdc nAdc µAdc Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com @vic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max AV2222 Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) — — VBE(sat) 0.6 — 1.2 2.0 0.3 1.0 Vdc — — — — 300 — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT Cobo Cibo hie 2.0 0.25 hre — — hfe 50 75 hoe 5.0 25 rb′Cc NF — — 35 200 150 4.0 ps dB 300 375 8.0 4.0 — 8.0 1.25 X 10– 4 300 — — — 8.0 25 MHz pF pF kΩ mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf — — — — 10 25 225 60 ns ns ns ns 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. v v Copyright @vic Electronics Corp. 2 Website: http://www.avictek.com @vic SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 –2 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ < 2 ns 200 +16 V 0 CS* < 10 pF –14 V < 20 ns 1k 1N914 –4 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% AV2222 + 30 V 200 CS* < 10 pF Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 TJ = 125°C 25°C 100 70 50 30 20 10 0.1 –55°C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region Copyright @vic Electronics Corp. 3 Website: http://www.avictek.com @vic 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 t′s = ts – 1/8 tf AV2222 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn – On Time Figure 6. Turn – Off Time 10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 6.0 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product Copyright @vic Electronics Corp. 4 Website: http://www.avictek.com @vic 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0 – 0.5 – 1.0 – 1.5 – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 RqVB for VBE RqVC for VCE(sat) +0.5 AV2222 0.2 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 11. “On” Voltages Figure 12. Temperature Coefficients Corpright @vic Electronics Corp. 5 Website: http://www.avictek.com
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