OB2576xT
High Performance QR mode Primary-Side Power Switch
GENERAL DESCRIPTION
FEATURES
Primary-side sensing and regulation operates
in QR mode without TL431 and opto-coupler
High precision constant voltage and current
regulation at universal AC input
Programmable CV and CC regulation
Integrated power MOSFET
Good dynamic response
Built-in line compensation for tight CC
regulation
Built-in fixed cable compensation
Built-in primary winding inductance
compensation
Built-in control loop compensation
Built-in leading edge blanking (LEB)
Ultra low start-up current and low operating
current
Comprehensive protection coverage with
auto-recovery
VDD over voltage protection (VDD OVP)
VDD under voltage lockout with
hysteresis (UVLO)
Cycle-by-cycle current limiting
Feedback open loop protection (OLP)
Output short circuit protection (SCP)
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OB2576xT is an excellent primary side regulation
power switch with CC/CV operation for medium
level power AC/DC charger and adapter
applications. The device integrates an internal
power MOSFET and operates in QR mode to
provide high efficiency along with several functions
of built-in protections. It removes the need for
secondary feedback circuitry to lower the total bill
of material cost. Proprietary Constant Voltage (CV)
and Constant Current (CC) control is integrated as
shown in the figure below.
In CV control, the controller changes the mode of
operation according to load condition. At full
loading, the controller operates in quasi-resonant
(QR) mode in the universal line voltage. The
primary side regulation power supplies up to high
power without the efficiency limitation of DCM or
audible noise.
In CC control, OB2576xT samples the Vcs peak
current and the demagnetization pulse to
regulation the output current. The current and
output power setting can be adjusted externally by
the sense resistor Rs at CS pin.
OB2576xT offers comprehensive protection
coverage with auto-recovery feature including
Cycle-by-Cycle current limiting, VDD OVP, OLP,
SCP, OTP etc.
OB2576xT consumes less than 75mW input
power at no- load condition with high line voltage.
OB2576xT is offered in SOP8 package.
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APPLICATIONS
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Medium level Power AC/DC offline SMPS for
Cell phone charger
Tablet PC
AC/DC adapter
Set-top box power supplies
Figure.1. Typical CC/CV Curve
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TYPICAL APPLICATION
©On-Bright Electronics
Confidential
-1-
Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
GENERAL INFORMATION
8
DRAIN
GND
2
7
DRAIN
FB
3
6
DRAIN
CS
4
5
DRAIN
Ordering Information
Part Number
Description
OB2576TCP
SOP8, Halogen-free in Tube
OB2576TCPA
SOP8, Halogen-free in T&R
OB2576ATCP
SOP8, Halogen-free in Tube
OB2576ATCPA
SOP8, Halogen-free in T&R
OB2576BTCP
SOP8, Halogen-free in Tube
OB2576BTCPA
SOP8, Halogen-free in T&R
-40 to 150 ℃
-20 to 85 ℃
-55 to 150 ℃
260 ℃
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Note: Stresses beyond those listed under “absolute maximum
ratings” may cause permanent damage to the device. These
are stress ratings only, functional operation of the device at
these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure
to absolute maximum-rated conditions for extended periods
may affect device reliability.
Recommended Operating Condition
Symbol
Parameter
Range
VDD
VDD Supply Voltage
9 to 31V
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Package Dissipation Rating
Package
RθJA (℃/W)
SOP8
85
Marking Information
Value
-0.3 to 35V
-0.3 to 7V
-0.3 to Bvdss
-0.3 to 7V
坤
VDD
1
Absolute Maximum Ratings
Parameter
VDD Voltage
FB Input Voltage
Drain Voltage (off state)
CS Input Voltage
Min/Max Operating Junction
Temperature TJ
Operating
Ambient
Temperature TA
Min/Max
Storage
Temperature Tstg
Lead
Temperature
(Soldering, 10secs)
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Pin Configuration
YWWZZZ
OB2576TCP
A
S
Y:Year Code
WW:Week Code(01-52)
ZZZ:Lot Code
C:SOP8 Package
P:Green Package(Halogen-free)
A:Character Code
S:Internal Code(Optional)
©On-Bright Electronics
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
TERMINAL ASSIGNMENTS for OB2576xTCP
Pin Name
I/O
Description
1
VDD
P
Power Supply
2
GND
P
Ground
3
FB
I
The voltage feedback from auxiliary winding. Connected to resistor
divider from auxiliary winding reflecting output voltage.
4
CS
I
Current sense input. Connect a sense resistor from this pin to ground.
5,6,7,8
DRAIN
O
Internal MOSFET DRAIN output
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Pin Num
©On-Bright Electronics
Confidential
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
BLOCK DIAGRAM
Vref
Demag
detect
QR
& CV foldback multi
mode control
dem
Logic
Vcomp
sample
Vref_CV
S
EA
+
Cable
compensation
CLR
LPF
Q
Vline_os
+ CC comp
dem
CC
Control
LEB
CS
dem
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SC
Filter
+
S/H
Vref_CC
GND
Gate
Drive
Q
CV comp
+
on
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Vline_os
Line
compensation
R
SET
DRAIN
o
FB
Fs_max / Fs_min
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OVP &
Open loop&
Iref
坤
UVLO&AVDD
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VDD
Reference
©On-Bright Electronics
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
ELECTRICAL CHARACTERISTICS
(TA = 25℃, VDD=18V, if not otherwise noted)
Symbol
Parameter
Supply Voltage (VDD) Section
I start-up
Start up current
Operating current
FB=1V
14.5
6.5
31
15
uA
0.8
1.0
mA
1.5
2.5
mA
16
7
33
17.5
7.5
35
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Unit
V
V
V
525
ns
700
mV
600
mV
2.475 2.5
For OB2576ATCP
Maximum cable compensation to
For OB2576TCP
Vout ratio
For OB2576BTCP
CC Loop Section
Vref_cc
CC loop reference
Timer Section
Fs_max
CV QR maximum frequency
Fmin
Minimum switch frequency
Internal OTP Section
nB
5
VDD=UVLO_OFF-1V
UVLO(OFF)
VDD under voltage lockout exit
UVLO(ON)
VDD under voltage lockout enter
VDD_OVP
VDD over voltage protection
Current Sense Input Section
LEB time and OCP propagation
TLEB+TD_OC
delay
Maximum
over
current
Vth_ocp_max
threshold@ Low AC voltage
Maximum
over
current
Vth_ocp_max
threshold@ High AC voltage
FB Input Section
Reference voltage for feedback
Vref_fb
threshold
V_OVP
Output Over voltage threshold
Vth_cc_shutdown CC mode shut down threshold
CC mode shut down debounce
Tdbs_cc_shutdown
time
∆cable_max/Vout
Max
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Iop_s
Typ.
坤
Standby current
Min
o
I standy
Test Conditions
2.525 V
3.25
1.55
60
V
V
65
3
5
7
ms
%
%
%
290
300
310
mV
74
0.27
80
0.3
86
0.33
KHz
KHz
OTP_int_enter
internal OTP enter temperature
150
℃
OTP_int_exit
internal OTP exit temperature
120
℃
O
MOSFET Section
BVdss
Rdson
Mosfet
Drain-Source
Breakdown Voltage
Static drain to source on
resistance
©On-Bright Electronics
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620
V
2.2
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
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CHARACTERIZATION PLOTS
©On-Bright Electronics
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-6-
Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
OPERATION DESCRIPTION
兴
charging starts in the CC portion of the curve until
it is nearly full charged and smoothly switches to
operate in CV portion of the curve. The CC portion
provides output current limiting. In CV operation,
the output voltage is regulated through the primary
side control. In CC operation mode, OB2576xT will
regulate the output current constant regardless of
the output voltage drop.
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Principle of Operation
With OB2576xT proprietary CC/CV control,
system can be designed in QR/DCM mode for
flyback system (Refer to the Typical Application
Diagram in page1).
In the flyback converter, the output voltage can be
sensed via the auxiliary winding. During MOSFET
turn-on time, the load current is supplied from the
output filter capacitor and the current in the
primary winding ramps up. When MOSFET turns
off, the energy stored in the primary winding is
transferred to the secondary side and the current
in the secondary winding is
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OB2576xT is an excellent integrated multi-mode
(see Figure 2) PWM power switch optimized for
off-line middle power AC/DC applications. It
operates in quasi-resonant mode (QR) to provide
high efficiency with primary side sensing and
regulation thus provides cost effective solution for
energy efficient power supplies.
At full loading, the IC operates in QR mode in the
universal line input voltage. In this way, high
efficiency in the universal input range at full
loading can be achieved.
At normal load condition, it operates in QR mode.
To minimize switching loss, the maximum
switching frequency in QR mode is internally
limited to 80 kHz (typical). When the load goes low,
it operates in PFM mode with valley switching for
high power conversion efficiency. When the load is
very small, the IC switch frequency can be
reduced to 0.3kHz to minimize the standby power
loss. As a result, high conversion efficiency can be
achieved in the whole loading range.
IS
NP
IP
NS
(1)
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The auxiliary winding voltage reflects the output
voltage as shown in Figure.3 and it is given by
V AUX
N AUX
(VO V )
NS
(2)
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Where V indicates the voltage drop of the
output Diode.
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Figure 2 Multi-mode operation diagram
Proprietary built-in CV and CC control can achieve
high precision CC/CV control meeting most
charger application requirements.
nB
Startup Current and Start Up Control
Startup current of OB2576xT is designed to be
very low so that VDD could be charged up above
UVLO threshold level and device starts up quickly.
A large value startup resistor can therefore be
used to minimize the power loss yet achieve a
reliable startup in application.
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Figure.3. Auxiliary winding voltage waveform
Via a resistor divider connected between the
auxiliary winding and FB PIN, the auxiliary voltage
is sampled and hold during the demagnetization
cycle. The sampling instance is variable according
to the demagnetization width. The output voltage
can be monitored when the secondary current is
small. Thus ∆V can be ignored. The sampled
voltage is compared with reference voltage Vref
(typical 2.5V) and the difference is amplified. The
error amplifier output reflects the load condition
and controls the switching off time to regulate the
output voltage, thus constant output voltage can
Operating Current
The Operating current of OB2576xT is as low as
around 800uA @ no load mode. Good efficiency
and less than 75mW standby power is achieved
with the low operating current.
CV Mode Operation
OB2576xT is designed to produce good CC/CV
control characteristic as shown in the Figure. 1.
In charger applications, a discharged battery
©On-Bright Electronics
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
be achieved.
CC Mode Operation
OB2576xT sample the CS peak and the
transformer core demagnetization period to
regulate to output current. The primary CS peak is
adaptively controlled according to vref_cc and the
internal CC comp voltage.
Tdemag 1
1
1 Vcs Tdemag (3)
N I pk
N
Ts
Rcs
Ts
2
2
Where Ipk is the peak current of primary winding,
Tdemag is the transformer core demagnetization
period, and Ts, the switch period.
Refer to the equation 3, Regulating the Ipk can
achieve the constant output current. The constant
output current is independent of the primary
Ts
be modulated equal to vref_cc which is 0.3V.
Then Io can be determined by
Io
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Vcs Tdemag
Figure.5. CC line voltage compensation
The CS threshold voltage Vcs is given by
1 Naux
Ros (5)
Vcs Vth _ cc
2 Vac
Rup
M Np
Where Vth_cc threshold determined by internal
CC comp voltage, M is the FB current mirror
ratio(M=55), Naux/Np is the auxiliary winding to
primary winding turns ratio, Vac is the effective
voltage of input voltage, Ros is the internal line
compensation offset resistor(Ros=1.5kohm) , Rup
is the external FB PIN up side resistor.
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winding inductance. The ratio of
兴
Io
1
1 Vcs Tdemag 1
vref _ cc
(4)
N
N
2
Rcs
Ts
2
Rcs
Current Sensing and Leading Edge Blanking
Cycle-by-Cycle current limiting is offered in
OB2576xT. The switch current is detected by a
sense resistor into the CS pin. An internal leading
edge blanking circuit chops off the sensed voltage
spike at initial power MOSFET on state so that the
external RC filtering on sense input is no longer
needed.
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Adjustable CC Point and Output Power
In OB2576xT, the CC point and maximum output
power can be externally adjusted by external
current sense resistor Rs at CS pin as illustrated in
the typical application diagram. The larger the Rs
is, the smaller CC point is, and the smaller output
power becomes, and vice versa as shown in
Figure.4.
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Internal Over Temperature Protection with
GATE Shutdown
The internal OTP circuit of OB2576xT is triggered
and only shuts down the internal MOSFET when
the chip temperature rises above 150℃, and the
internal MOSFET will resume switching after the
chip temperature falls below 120℃.
nB
Protection Control
Good power supply system reliability is achieved
with its rich protection features including
Cycle-by-Cycle current limiting, Output over
voltage protection, VDD over voltage protection,
short circuit protection, Under Voltage Lockout on
VDD.
VDD is supplied by transformer auxiliary winding
output after startup. The output of OB2576xT is
shut down when VDD drops below UVLO (ON)
and the power converter enters power on start-up
sequence thereafter.
Figure.4. Adjustable output power by changing Rs
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CC Line Voltage Compensation
The variation of maximum output current in CC
mode can be rather large at high input voltage
(such as 264Vac) if no compensation is provided.
The CC threshold value is self adjusted higher at
higher AC voltage due to CC propagation delay. In
OB2576xT, the AC line voltage information is
sampled through detecting FB sourcing current
when gate turns on, and the AC line voltage
information is added to the CS pin voltage. So the
maximum CS threshold voltage Vcs_max in
OB2576xT is a function of the CC threshold and
AC line voltage information as shown in Figure5.
©On-Bright Electronics
CC mode shutdown function
In OB2576xT, to prevent the controller operating
under abnormal conditions, the minimum output
voltage of CC mode is limited to predetermined
voltage. The CC output voltage is sampled through
FB pin from auxiliary winding at the middle of the
de-magnetization. When the FB sampled voltage
Confidential
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
is below 1.55V and last 60ms, the controller will
shut down.
Bypass Capacitor and FB Divider Resistor: The
bypass capacitor on VDD and the FB divider
resistor should be placed as close as possible to
pin out. And the negative node of VDD capacitor
and the FB down resistor should be connected
directly to the IC GND pin before single point
connected to the negative node of the output
capacitor. (Blue wire as shows in Fig.6)
Ground Path: The GND path of the input power
loop and IC controller path should be separated
and connected at the negative terminal of input
capacitor by single point, such as power sense
resistor, the negative of the auxiliary winding and
the IC GND. (White region as shows in Fig.7)
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PCB Layout Consideration
The following rules should be followed in
OB2576xT PCB Layout:
The Area of Power Loop: The area of the main
current loop should be as small as possible to
reduce EMI radiation, such as the primary current
loop, the snubber circuit and the secondary
rectifying loop (Red wire as shows in Fig.6). Drain
pin increases the copper area of the drain terminal
for heat dissipation (Green region as shows in
Fig.7). And the PCB trace must be wide and
short for thermal consideration.
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Fig.6 Flyback Schematic with OB2576xT
©On-Bright Electronics
Fig.7 Recommend PCB Layout of OB2576xT
Confidential
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Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
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A
A1
A2
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D
E
E1
e
L
θ
Dimensions In Millimeters
Min
Max
1.350
1.750
0.050
0.250
1.250
1.650
0.310
0.510
0.100
0.250
4.700
5.150
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
0º
8º
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PACKAGE MECHANICAL DATA
©On-Bright Electronics
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Dimensions In Inches
Min
Max
0.053
0.069
0.002
0.010
0.049
0.065
0.012
0.020
0.004
0.010
0.185
0.203
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
0º
8º
Preliminary Datasheet
OB_DOC_DS_2576xT00
OB2576xT
High Performance QR mode Primary-Side Power Switch
IMPORTANT NOTICE
RIGHT TO MAKE CHANGES
On-Bright Electronics Corp. reserves the right to make corrections, modifications, enhancements,
improvements and other changes to its products and services at any time and to discontinue any product
or service without notice. Customers should obtain the latest relevant information before placing orders
and should verify that such information is current and complete.
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WARRANTY INFORMATION
On-Bright Electronics Corp. warrants performance of its hardware products to the specifications applicable
at the time of sale in accordance with its standard warranty. Testing and other quality control techniques
are used to the extent it deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
On-Bright Electronics Corp. assumes no liability for application assistance or customer product design.
Customers are responsible for their products and applications using On-Bright’s components, data sheet
and application notes. To minimize the risks associated with customer products and applications,
customers should provide adequate design and operating safeguards.
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LIFE SUPPORT
On-Bright Electronics Corp.’s products are not designed to be used as components in devices intended to
support or sustain human life. On-bright Electronics Corp. will not be held liable for any damages or claims
resulting from the use of its products in medical applications.
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MILITARY
On-Bright Electronics Corp.’s products are not designed for use in military applications. On-Bright
Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in
military applications.
©On-Bright Electronics
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Preliminary Datasheet
OB_DOC_DS_2576xT00