LD262

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays Lead (Pb) Free Product - RoHS Compliant LD 260 LD 262 … LD 269 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Zeilenbauform, lieferbar von 2 bis 10 Emitter pro Zeile • Farbe: transparent • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 80-Serie • Miniatur-Gehäuse Anwendungen • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb • Barcodeleser • Industrieelektronik • „Messen/Steuern/Regeln“ • Sensorik • Drehzahlsteuerung Features • GaAs infrared emitting diode • Leadframe arrays, available from 2 to 10 Emitters per array • Colour: transparent • High reliability • Available in bins • Same package as BPX 80 series • Miniature package Applications • • • • • • Miniature photointerrupters Barcode readers Industrial electronics For control and drive circuits Sensor technology Speed controller 2007-04-03 1 LD 260, LD 262 … LD 269 Typ Type LD 262 LD 263 LD 264 LD 265 LD 266 LD 267 LD 268 LD 269 LD 260 1) IRED pro Zeile per Row 2 3 4 5 6 7 8 9 10 Bestellnummer Ordering Code Q62703Q0070 Q62703Q0071 Q62703Q0072 Q62703Q0073 Q62703Q0074 Q62703Q0075 Q62703Q0076 Q62703Q0077 Q62703Q0078 Strahlstärkegruppierung 1) (IF = 50 mA, tp = 20 ms) Radiant intensity grouping 1) Ie (mW/sr) > 2.5 (typ. 5) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr 2007-04-03 2 LD 260, LD 262 … LD 269 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom, τ ≤ 10 μs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 50 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 50 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip surface to lens top Symbol Symbol λpeak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value – 40 … + 80 80 5 50 1.6 70 750 650 Einheit Unit °C °C V mA A mW K/W K/W Top; Tstg Tj VR IF IFSM Ptot RthJA RthJL Δλ 55 nm ϕ ± 15 0.25 0.5 × 0.5 1.3 … 1.9 Grad deg. mm2 mm² mm A L×B L×W H 2007-04-03 3 LD 260, LD 262 … LD 269 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 50 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 50 mA, RL = 50 Ω Kapazität, VR = 0 V Capacitance Durchlassspannung, IF = 50 mA, tp = 20 μs Forward voltage Sperrstrom, VR = 5 V Reverse current Gesamtstrahlungsfluss, IF = 50 mA, tp = 20 ms Total radiant flux Temperaturkoeffizient von Ie bzw. Φe, IF = 50 mA Temperature coefficient of Ie or Φe, IF = 50 mA Temperaturkoeffizient von VF, IF = 50 mA Temperature coefficient of VF, IF = 50 mA Temperaturkoeffizient von λpeak, IF = 50 mA Temperature coefficient of λpeak, IF = 50 mA Strahlstärke, IF = 50 mA, tp = 20 ms Radiant intensity Symbol Symbol Wert Value 1 Einheit Unit μs tr , tf Co VF IR Φe 40 1.25 (≤ 1.4) 0.01 (≤ 1) 9 – 0.55 pF V μA mW %/K TCI TCV TCλ Ιe – 1.5 0.3 typ. 5 (≥ 2) mV/K nm/K mW/sr 2007-04-03 4 LD 260, LD 262 … LD 269 Relative Spectral Emission Irel = f (λ) 100 % OHRD1938 Radiant Intensity Ιe = f (IF) Ιe 100 mA OHR01039 Single pulse, tp = 20 μs Ιe 10 2 Max. Permissible Forward Current IF = f (TA) 80 Ι F mA 70 60 OHR01124 Ι e (100 mA) Ι rel 80 10 1 60 50 40 40 R thJL = 650 K/W 10 0 20 30 R thJA = 750 K/W 20 10 0 880 920 960 1000 nm 1060 λ 10 -1 10 -2 0 10 -1 10 0 A ΙF 10 1 0 20 40 60 80 C 100 TA , TL Forward Current IF = f (VE), single pulse, t p = 20 μ s ΙF 10 1 A OHR01042 Permissible Pulse Handling Capability IF = f (τ), TC = 25 °C, duty cycle D = parameter 10 4 OHR02182 Ι F mA 10 0 typ. max. 10 3 D=0 0,005 0,01 0,02 τ D= τ T T ΙF 0,05 0,1 0,2 10 -1 10 2 0,5 DC 10 -2 1 1.5 2 2.5 3 3.5 4 V 4.5 VF 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 τ Radiation Characteristics Irel = f (ϕ) 40 30 20 10 0 1.0 OHR01878 ϕ 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2007-04-03 5 LD 260, LD 262 … LD 269 Maßzeichnung Package Outlines Chip position 7.4 (0.291) 7.0 (0.276) 3.5 (0.138) 0.4 (0.016) 2.54 (0.100) spacing 0.7 (0.028) 0 ... 5˚ 0.6 (0.024) A 0.4 A 0.25 (0.010) 0.15 (0.006) 2.1 (0.083) 1.5 (0.059) 1.4 (0.055) 1.0 (0.039) Collector (BPX 83) Cathode (LD 263) Maße in mm (inch) / Dimensions in mm (inch). . Typ Type LD 262 LD 263 LD 264 LD 265 LD 266 LD 267 LD 268 LD 269 LD 270 IRED pro Zeile IRED per Row 2 3 4 5 6 7 8 9 10 Maß „A“ Dimension “A” 4.5 ... 4.9 7.0 ... 7.4 9.6 ... 10.0 12.1 ... 12.5 14.6 ... 16.0 17.2 ... 17.6 19.7 ... 20.1 22.3 ... 22.7 24.8 ... 25.2 GEOY6367 2007-04-03 6 3.0 (0.118) 0.5 (0.020) 1.9 (0.075) 1.7 (0.067) 2.7 (0.106) 2.5 (0.098) 3.6 (0.142) 3.2 (0.126) LD 260, LD 262 … LD 269 Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) 300 C T 250 235 C ... 260 C OHLY0598 10 s Normalkurve standard curve 2. Welle 2. wave Grenzkurven limit curves 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling ca 200 K/s 5 K/s 2 K/s 0 0 50 100 150 t 200 s 250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 7