PBSS4350X,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 50 V IC collector current (DC) 3 A • Higher efficiency leading to less heat generation ICM peak collector current 5 A • Reduced printed-circuit board requirements. RCEsat equivalent on-resistance 130 • High collector current capability: IC and ICM PARAMETER MAX. UNIT PINNING APPLICATIONS • Power management PIN DESCRIPTION – DC/DC converters 1 emitter – Supply line switching 2 collector – Battery charger 3 base – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). 2 3 DESCRIPTION 1 NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5350X. sym042 3 2 1 MARKING TYPE NUMBER PBSS4350X 2004 Nov 04 MARKING CODE Fig.1 Simplified outline (SOT89) and symbol. S43 2 mΩ Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4350X SC-62 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 4 − 3 A ICM peak collector current limited by Tj(max) − 5 A IB base current (DC) − 0.5 A Ptot total power dissipation note 1 − 550 mW note 2 − 1 W note 3 − 1.4 W note 4 − 1.6 W +150 °C Tamb ≤ 25 °C Tstg storage temperature −65 Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Nov 04 3 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE186 2 handbook, halfpage Ptot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. 80 120 160 Tamb (°C) (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2004 Nov 04 4 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 225 K/W note 2 125 K/W note 3 90 K/W note 4 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 006aaa243 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X 006aaa244 103 Zth (K/W) 102 (1) (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa245 103 Zth (K/W) 102 (1) (2) (3) (5) 10 (4) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 50 V; IE = 0 A − − 100 nA VCB = 50 V; IE = 0 A; Tj = 150 °C − − 50 µA ICES collector-emitter cut-off current VCE = 50 V; VBE = 0 V − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V IC = 0.1 A 300 − − IC = 0.5 A 300 − − IC = 1 A; note 1 300 − 700 IC = 2 A; note 1 200 − − 100 − − IC = 0.5 A; IB = 50 mA − − 80 mV IC = 1 A; IB = 50 mA − − 160 mV IC = 2 A; IB = 100 mA − − 280 mV IC = 2 A; IB = 200 mA; note 1 − − 260 mV IC = 3 A; IB = 300 mA; note 1 − − 370 mV IC = 3 A; note 1 VCEsat collector-emitter saturation voltage RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 − 100 130 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 100 mA − − 1.1 V IC = 3 A; IB = 300 mA; note 1 − − 1.2 V 1.1 − − V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − − 25 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Nov 04 7 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE181 800 MLE180 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10−1 1 102 10 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. MLE183 1 10 102 Base-emitter voltage as a function of collector current; typical values. MLE184 1 handbook, halfpage 103 104 IC (mA) handbook, halfpage VCEsat VCEsat (V) (V) 10−1 10−1 (1) (1) (2) (2) (3) 10−2 10−3 10−1 1 10 102 10−2 (3) 10−3 10−1 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 04 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X MLE185 1.4 MLE182 103 handbook, halfpage handbook, halfpage RCEsat (Ω) VBEsat 102 (V) 1 (1) 10 (2) 1 (3) 0.6 (1) 10−1 0.2 10−1 1 10 102 (2) 10−2 −1 10 103 104 IC (mA) IC/IB = 20. 1 102 10 (3) 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. (1) Tamb = 150 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. MLE179 5 handbook, halfpage handbook, halfpage IC (1) (mA) (2) (6) (5) (4) (3) (2) (1) IC (A) 4 (3) 800 (3) Tamb = −55 °C. Fig.11 Equivalent on-resistance as a function of collector current; typical values. MLE178 1200 (2) Tamb = 25 °C. (7) (4) (8) 3 (5) (9) (6) (10) (7) 400 2 (8) (9) 1 (10) 0 0 0 0.4 0.8 1.2 1.6 2 VCE (V) 0 Tamb = 25 °C. (1) (2) (3) (4) IB = 2600 µA. IB = 2340 µA. IB = 2080 µA. IB = 1820 µA. 1.2 1.6 2 VCE (V) Tamb = 25 °C. (5) (6) (7) (8) IB = 1560 µA. IB = 1300 µA. IB = 1040 µA. IB = 780 µA. (9) IB = 520 µA. (10) IB = 260 µA. (1) (2) (3) (4) Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 04 0.8 0.4 IB = 120 mA. IB = 108 mA. IB = 96 mA. IB = 84 mA. (5) (6) (7) (8) IB = 72 mA. IB = 60 mA. IB = 48 mA. IB = 36 mA. (9) IB = 24 mA. (10) IB = 12 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 9 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 04 REFERENCES IEC JEDEC JEITA TO-243 SC-62 10 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Nov 04 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13883