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GBL06

GBL06

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    SIP4

  • 描述:

    DIODE BRIDGE 600V 4A GBL

  • 详情介绍
  • 数据手册
  • 价格&库存
GBL06 数据手册
GBL06 thru GBL10 Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V -1000 V IO = 4 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • This series is UL listed under the Recognized • Glass passivated chip junction GBL Package • High case dielectric strength • Typical IR less than 0,1 A • High surge current capability • Ideal for printed circuit boards • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Weight: 0.071 oz, 2.0 g Maximum ratings at Tc = 25 °C, unless otherwise specified Parameter Symbol Conditions GBL06 GBL08 GBL10 Unit 600 800 1000 V V Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS 420 560 700 DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C Conditions GBL06 GBL08 GBL10 Unit Tc = 50 °C (Note 1) 4.0 4.0 4.0 Tc = 40 °C (Note 2) 3.0 3.0 3.0 IFSM tp = 8.3 ms, half sine 135 135 135 A Maximum instantaneous forward voltage drop per leg VF IF = 4 A 1.1 1.1 1.1 V Maximum DC reverse current at rated DC blocking voltage per leg IR Ta = 25 °C 5 5 5 Ta = 125 °C 500 75 500 75 500 75 A2sec 40 40 40 pF 22 3.5 22 3.5 3.5 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Maximum average forward rectified current Peak forward surge current Rating for fusing Typical junction capacitance per leg (Note 3) Typical thermal resistance per leg Symbol IO I2 t t < 8.3 ms Cj RΘJA RΘJL (Note 1) (Note 2) 1 - Unit mounted on 3.0" x 3.0" x 0.11" (75 mm x 75 mm x 3 mm) Al plate 2 - Unit mounted on P.C.B. At 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 mm x 12 mm) - Measured at 1.0 MHz and applied reverse bias of 4.0 V 3 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 22 A μA °C/W GBL06 thru GBL10 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 2 GBL06 thru GBL10 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Di Dimensions i iin iinches h and d ((millimeters) illi t ) www.genesicsemi.com/silicon-products/bridge-rectifiers/ 3
GBL06
物料型号:GeneSiC GBL06至GBL10

器件简介: - 这些整流器具有600V至1000V的反向重复峰值电压(VRRM)和4A的直流电流(I0)。 - 它们具有玻璃钝化芯片结、塑料封装,并且符合RoHS和REACH标准。 - 这些整流器适用于印刷电路板,具有高浪涌电流能力,并且不敏感于静电放电(ESD)。

引脚分配:文档中提到了引脚分配,但未提供具体细节。

参数特性: - 包括重复峰值反向电压(VRRM)、RMS反向电压(VRMS)、直流阻断电压(Vpc)、工作温度(T)和存储温度(Tstg)等。

功能详解: - 包括最大平均正向整流电流(IF)、峰值正向浪涌电流(IFSM)、每腿的最大瞬态正向电压降(VF)、每腿在额定直流阻断电压下的最大直流反向电流(IR)等。

应用信息: - 整流器适用于印刷电路板,并且具有高浪涌电流能力。

封装信息: - 提供了GBL封装的尺寸和终端配置,产品会标记零件号和终端配置。
GBL06 价格&库存

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