TP0610K-T1

TP0610K-T1 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 3 at VGS = - 10 V - 1 to - 3 -500 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC S TO-236 (SOT-23) G G 1 3 S D 2 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C TA = 100 °C Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. E-mail：China@VBsemi TEL:86-755-83251052 ID IDM TA = 25 °C TA = 100 °C PD Unit V - 500 - 350 mA -1500 460 240 mW RthJA 350 °C/W TJ, Tstg - 55 to 150 °C TP0610K-T1 www.VBsemi.tw SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea IGSS IDSS ID(on) RDS(on) -3 VDS = 0 V, VGS = ± 20 V ± 10 VDS = 0 V, VGS = ± 10 V ± 200 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 50 VGS = - 10 V, VDS = - 10 V - 600 VGS = - 4.5 V, ID = - 25 mA 4 3 Diode Forward Voltage VDS = - 10 V, ID = - 100 mA VSD IS = - 100 mA, VGS = 0 V nA mA VGS = - 10 V, ID = - 100 mA gfs µA - 250 VGS = - 10 V, VDS = - 4.5 V VGS = - 10 V, ID = - 100 mA, TJ =125 °C Forward Transconductancea V  9 80 mS - 1.4 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2.0 VDS = - 30 V, VGS = - 15 V ID  - 100 mA 1.2 VDS = - 25 V, VGS = 0 V f = 1 MHz 10 nC 0.8 23 pF 5 Switchingb Turn-On Time td(on) Turn-Off Time td(off) VDD = - 25 V, RL = 150  ID  - 200 mA, VGEN = - 10 V, Rg = 10  20 35 ns Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. E-mail：China@VBsemi TEL:86-755-83251052 TP0610K-T1 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1200 VGS = 10 V TJ = - 55 °C 5V 6V I D - Drain Current (mA) ID - Drain Current (A) 0.8 0.6 4V 0.4 3V 900 25 °C 125 °C 600 300 0.2 2V 0.0 0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 40 15 VGS = 0 V VGS = 4.5 V 32 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 12 9 VGS = 5 V 6 VGS = 10 V 3 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 25 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VDS = 48 V 9 6 3 0 0.0 15 VGS = 10 V at 500 mA 1.2 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Gate Charge E-mail：China@VBsemi TEL:86-755-83251052 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 TP0610K-T1 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 1000 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 2.5 ID = 250 µA 0.3 2 0.2 Power (W) VGS(th) Variance (V) 2 0.1 1.5 - 0.0 1 TA = 25 °C - 0.1 0.5 - 0.2 - 0.3 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 100 10 1 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 600 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 350 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 100 600 TP0610K-T1 www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail：China@VBsemi TEL:86-755-83251052 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° TP0610K-T1 www.VBsemi.tw 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 0.049 (0.559) (1.245) (0.950) 0.029 0.022 (0.724) 0.037 (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 TP0610K-T1 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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