PJM10H03NSC

PJM10H03NSC N-Channel Enhancement Mode Power MOSFET Features    SOT-23-3 VDS = 100V,ID = 3A RDS(ON) < 160mΩ(Typ.) @ VGS = 10V RDS(ON) < 170mΩ(Typ.) @ VGS = 4.5V High density cell design for ultra low RDS(on) Excellent package for good heat dissipation 2 3 1 1. Gate 2.Source 3.Drain Marking: 0103C Applications  Power switching application  Uninterruptible power supply Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed Note1 IDM 30 A Maximum Power Dissipation PD 1.5 W TJ,TSTG 150,-55 to 150 ℃ RθJA 83 ℃/W Parameter Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Feb-2019 Note2 1/7 PJM10H03NSC N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 100 - - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250μA 1 1.5 2.0 V VGS=10V, ID=3A - 136 160 VGS=4.5V, ID=3A - 140 170 VDS=5V,ID=3A - 5 - S - 650 - pF - 24 - pF - 20 - pF - 6 - nS - 4 - nS - 20 - nS - 4 - nS - 20 - nC - 2.1 - nC - 3.3 - nC - - 1.2 V - - 3 A Parameter Static Characteristics Gate Threshold Voltage Note3 Drain-Source On-State Resistance Note3 Forward Transconductance Note3 RDS(ON) gFS mΩ Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, f=1.0MHz Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=50V,RL=19Ω, VGS=10V RG=3Ω VDS=50V,ID=3A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V, IS=3A Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Feb-2019 2/7 PJM10H03NSC N-Channel Enhancement Mode Power MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Characteristics Curves TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current www.pingjingsemi.com Revision：1.0 Feb-2019 Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward 3/7 C Capacitance (nF) ID- Drain Current (A) PJM10H03NSC N-Channel Enhancement Mode Power MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Power Dissipation (w) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Power De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.pingjingsemi.com Revision：1.0 Feb-2019 4/7 PJM10H03NSC N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-3 Dimensions in mm 2.8 1.6 10 12 0.95 0.35 0.127± 0.03 ± 0.01 A ±0.1 ±0.05 2.92 ± 0.05 R0.15MAX `4X R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 ± 0.03 0.65 1.1 ± 0.05 10 Ordering Information Device Package Shipping PJM10H03NSC SOT-23-3 3000PCS/Reel&Tape www.pingjingsemi.com Revision：1.0 Feb-2019 5/7 PJM10H03NSC N-Channel Enhancement Mode Power MOSFET Conditions of Soldering And Storage Recommended condition of reflow soldering  Figure Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Feb-2019 6/7 PJM10H03NSC N-Channel Enhancement Mode Power MOSFET Package Specifications Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 21 43 5 120,000 pcs per carton 4 boxes per carton 455 220 2. Tape and reel data(7inch Units:mm) D A 3000 T2 T1 2900 2000 1900 1000 600 B C E PS F 1.10±0.10 Pin1 www.pingjingsemi.com N 3.2±0.10（Bo） 8 MAX 0.75 1.40±0.10（Ko） B-B Tape (8mm) Revision：1.0 Feb-2019 0.46 0.2 8 MAX B 4.00±0.10 0.25±0.02（T） 2.45 1.55±0.05 3.50±0.05 2.00±0.05 8 ± 0 .1 0 4.00±0.10 B 1.75±0.10 Reel (7'') Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.22±0.1 7/7