ABS210

ABS201-ABS210 PASSIVATED BRIDGE RECTIFIER FEATURES: • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V 0.177(4.5) 0.169(4.3) • Forward Current - 2 A 0.252(6.4) 0.236(6.0) • High Surge Current Capability • Designed for Surface Mount Application 0.028(0.7) 0.024(0.6) MECHANICAL DATA 0.069(1.7) 0.051(1.3) 0.161(4.1) 0.154(3.9) 0.200(5.1) 0.193(4.9) Case: ABS molded plastic body Epoxy: UL94V-0 rate flame retardant 0.028(0.7) 0.012(0.3) 0.066(1.42) 0.048(1.22) Terminals: Plated leads solderable per MIL-STD-750,method 2026 Mounting Position: Any Weight: 0.0044ounce, 0.125 gram 0.006(0.15) 0.002(0.05) 0.010(0.25) 0.006(0.15) Dimensions in inches and (millimeters) Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols ABS201 ABS202 ABS204 ABS206 ABS208 ABS210 Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T c = 115 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage per element @I F =2.0A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =125 °C @ T A =25 °C Typical Junction Capacitance（Note1） Typical Thermal Resistance（Note2） Operating and Storage Temperature Range IO 2.0 A I FSM 50 A VF 1.0 V IR 5.0 100 μA Cj 25 pF RθJA RθJC 60 16 °C/W T j , T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. www.slkormicro.com 1 ABS201-ABS210 Fig.2 Typical Reverse Characteristics Instaneous Reverse Current（μ A） Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 2.4 2.0 1.6 1.2 0.8 0.4 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 1.0 1.5 2.0 80 100 100 120 140 T J =25°C 10 0.1 60 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles www.slkormicro.com 1.0 10 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 60 1 0.5 Instaneous Forward Voltage (V) 10 40 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) CaseTemperature (°C) 2 100