AC150N03D

30V/150A N-Channel MOSFET General Description  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Pb-free lead plating; RoHS compliant Part ID ACD150N03A Package Type Marking DFN5x6 150N03 ACD150N03A V DS V(RB)DSS IS 2.5 mΩ ID 150 A RDS(on),TYP@VGS=4.5 Tape and reel infomation 3000PCS/Reel ID Drain-Source breakdown voltage Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation EAS VGS TSTG TJ Avalanche energy, single pulsed ② Gate-Source voltage Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient mΩ Rating Unit 150 A 30 CT =25° V 150 A CT =25° 400 A CT =25° 105 CT =100° 100 Storage and operating temperaturerange Thermal Characteristics 3.6 100% UIS Tested 100% Rg Tested Parameter Diode continuous forward current V RDS(on),TYP@VGS=10V Maximum ratings, at TC =25°C, unless otherwise specified Symbol 30 A 450 mJ ±20 V W -55 to 150 Typical 1.1 48 °C Unit °C/W °C/W ACD150N03A 30V/150A N-Channel MOSFET Thermal Characteristics Symbol Parameter Condition Min Typ Max Unit Zero Gate Voltage Drain Current(Tc=25℃) VGS=0V ID=250μA 30 - - V VDS=40V,VGS=0V -- -- 1 μA VDS=40V,VGS=0V -- -- 100 μA Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.7 2.5 V VGS=10V, ID=30A -- 2.5 4.5 mΩ VGS=4.5V, ID=20A -- 3.6 6 mΩ -- 3690 -- pF -- 525 -- 11 -- nC -- 16 -- nS -- nS Static Electrical Characteristics @ T j= 25°C (unless otherwise stated) V(BR)DSS IDSS IGSS VGS(TH) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=125℃) Drain-Source On-State Resistance ③ Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance CRSS Reverse Transfer Capacitance CDSS Qg Qgs Qds Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=30V,VGS=0V, f=1MHz VDS=20V,ID=20A, VGS=10V Switching Characteristics Td(on) Turn-on Delay Time Td(off) Turn-Off Delay Time tr tf Turn-on Rise Time Turn-Off Fall Time VDD=20V, ID=10A, RG=3.5Ω, VGS=10V Source- Drain Diode Characteristics@ T j= 25°C (unless otherwise stated) VSD Forward on voltage Qrr Reverse Recovery Charge trr NOTE: Reverse Recovery Time ISD=30A,VGS=0V Tj=25℃,Isd=20A, di/dt=500A/μs --- -- 550 -- pF 63 -- nC 16 -- -- -- 18 -- -- 24 -- -- 51 0.8 32 1.2 31 ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 43A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. pF nC nS nS V nS nC 30V/150A N-Channel MOSFET VDS, Drain -Source Voltage (V) VGS, Gate -Source Voltage (V) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Fig3. Typical Transfer Characteristics ISD, Reverse Drain Current (A) Tj - Junction Temperature (°C) Normalized On Resistance ID, Drain-Source Source Current (A) Fig1. Typical Output Characteristics VGS(TH), Gate -Source Voltage (V) ID, Drain-Source Current (A) Typical Characteristics ACD150N03A VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area 30V/150A N-Channel MOSFET ACD150N03A C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage ZqJC Normalized Transient Thermal Resistance) VDS , Drain-Source Voltage (V) Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9 . Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms 30V/150A N-Channel MOSFET ACD150N03A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms 30V/150A N-Channel MOSFET DFN5×6 Package Outline Data Customer Service ACD150N03A