AC6D04C

AC6D04C 40V /6A Power MOSFET C D04C D 6D04C 6D04C-N 6D04C-P General Description 40V /6A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 40 -40 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 26.6 44.1 mΩ 41.8 69.3 mΩ 6 -5 A Part ID Package Type Marking AC6D04C SOP8 6D04 Parameter Tape and reel infomation 100% UIS Tested 100% Rg Tested 3000 Maximum Symbol Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS 20 20 ±V 6.0 -5.0 5.0 -4.0 Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B IDM 9.6 -8.0 Avalanche Current G IAR 1.9 -1.6 Repetitive avalanche energy L=0.1mH G EAR 4.4 -3.7 2.0 2.0 1.3 1.3 TA=25°C Power Dissipation A PD TA=70°C Junction and Storage Temperature Range A mJ W -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State 第 1 页，共 9 页 RJA RJL Typ Max Units 95 142 °C/W 190 228 °C/W 57 91 °C/W AC6D04C 40V /6A Power MOSFET N-Channel Electrical Characteristics STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance Symbol Min Typ Max 40 V 1 5 uA ±100 nA 2.3 3 V VGS=-10V, ID=6A 26.6 38.0 VGS=4.5V, ID=6A 41.8 54.3 1.5 gFS Forward Transconductance VDS=5V, ID=6A 87 VSD Diode Forward Voltage IS=1A,VGS=22V 0.72 IS Units mΩ S 1 V 6 A Typ Max Units 516 629 pF 82 100 pF 43 51 pF 0.7 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Conditions Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge 1.0 Qgd Gate Drain Charge 1.4 tD(on) Turn-On DelayTime 9.0 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 18.0 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 10.0 nC Min Typ 4.3 2.2 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω nC 7.2 25.2 ns 8.1 第 2 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 3 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 4 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 5 页，共 9 页 AC6D04C 40V /6A Power MOSFET P-Channel Electrical Characteristics STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD Symbol IS Min Typ Max Units -40 V -1 5 uA ±100 nA -2.3 -3 V VGS=-10V, ID=-5A 44.1 63.0 VGS=-4.5V, ID=-5A 69.3 90.1 Forward Transconductance VDS=-5V, ID=-5A 53 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.5 mΩ S -1 V -5 A Typ Max Units 940 1146 pF 97 119 pF 72 85 pF 1.6 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Conditions Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge 2.2 Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 10.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 21.0 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 14.0 nC Min Typ 7.9 4.0 VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V,RL=0.75Ω, RGEN=3Ω nC 8.4 29.4 ns 9.5 第 6 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 7 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 8 页，共 9 页 AC6D04C 40V /6A Power MOSFET 第 9 页，共 9 页