AO3402

Plastic-Encapsulate Mosfets AO3402 FEATURES N-Channel MOSFET Lead free product is acquired Surface mount package D 1.Gate 2.Source SOT-23 3.Drain G S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 4 A Pulsed Drain Current (note 1) IDM 15 A Power Dissipation PD 1.4 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P1 Plastic-Encapsulate Mosfets AO3402 Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 3) Drain-source on-resistance (note 3) RDS(on) 30 V 1 µA ±100 nA 1.4 V VGS =10V, ID =4A 55 mΩ VGS =4.5V, ID =3A 70 mΩ VGS =2.5V, ID =2A 110 mΩ Forward transconductance (note 3) gFS VDS =15V, ID =4A Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 0.6 8 S 1 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 390 pF 54.5 pF 41 Pf 3 Ω 3.3 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time td(on) tr VGS=10V,VDS=15V, 1 ns td(off) RL=3.75Ω,RGEN=6Ω 21.7 ns Turn-off fall time tf 2.1 ns Total gate charge Qg 4.34 nC Gate-source Charge Qgs 0.6 nC Gate-drain Charge Qgd 1.38 nC 1.2 ns 6.3 nC Body diode reverse recovery time Body diode reverse recovery charge t. Qrr VDS =15V,VGS =4.5V,ID =4A IF=4A,dI/dt=100A/µs Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤80µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P2 Plastic-Encapsulate Mosfets AO3402 Typical Characteristics 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 6 4 3 125°C 2 VGS=2V 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 150 Normalized On-Resistance 1.8 125 VGS=2.5V RDS(ON) (mΩ Ω) 0.5 100 75 VGS=4.5V 50 25 VGS=10V 0 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 ID=2A 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 150 100 125°C 50 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 1.0E-05 0 0 2 4 6 8 1.0E-06 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage GUANGDONG HOTTECH 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics INDUSTRIAL CO., LTD Page:P4-P3 Plastic-Encapsulate Mosfets AO3402 Typical Characteristics 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Power (W) 10µs 100µs 1.0 1ms 1s DC 0.1s 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 5 10ms 10s 10 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1 20 20 TJ(Max)=150°C TA=25°C 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD 100 1000 Page:P4-P4