AO3404

Plastic-Encapsulate Mosfets AO3404 FEATURES N-Channel MOSFET The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. D 1.Gate 2.Source SOT-23 3.Drain G S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V Continuous drain current (t ≤10s) ID 5.8 A Pulsed drain current * IDM 30 A Thermal resistance from junction to ambient RθJA 357 ℃/W Junction temperature TJ 150 ℃ Storage temperature Tstg -55~ 150 ℃ Repetitive rating : Pulse width limited by maximum junction temperature. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P1 Plastic-Encapsulate Mosfets AO3404 Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units STATIC PARAMETERS V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 1) RDS(on) Drain-source breakdown voltage 30 V 1 µA ±100 nA 3 V VGS =10V, ID =5.8A 30 mΩ VGS =4.5V, ID =4.8A 42 mΩ Forward tranconductance (note 1) gFS VDS =5V, ID =5.8A Diode forward voltage VSD IS=1A 1 5 S 1 V 820 pF DYNAMIC PARAMETERS (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz 118 pF 85 pF VDS =0V,VGS =0V,f =1MHz 1.5 Ω 6.5 ns SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) tr VGS=10V,VDS=15V, 3.1 ns td(off) RL=2.6Ω,RGEN=3Ω 15.1 ns 2.7 ns Turn-on rise time Turn-off delay time Turn-off fall time tf Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. These parameters have no way to verify. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P2 Plastic-Encapsulate Mosfets AO3404 Typical Characteristics 15 30 10V VDS=5V 7V 25 4.5V 10 20 ID(A) ID (A) 4V 15 3.5V 5 10 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 25°C 125°C VGS=4.5V 30 25 VGS=10V 1.8 VGS=10V ID=5A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=4A 1 0.8 20 0 3 6 9 12 0 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 100 1.0E+02 ID=5A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (mΩ ) 80 125°C 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) GUANGDONG HOTTECH 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) INDUSTRIAL CO., LTD Page:P4-P3 Plastic-Encapsulate Mosfets AO3404 Typical Characteristics 400 10 VDS=15V ID=5A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 1000 10µs RDS(ON) limited Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P4