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1N4148WS

1N4148WS

  • 厂商:

    TK(通科)

  • 封装:

    SOD323

  • 描述:

    VR=100V IF=300mA Trr=4ns P=200mW

  • 数据手册
  • 价格&库存
1N4148WS 数据手册
东莞市通科电子有限公司 1N4148WS DongGuan Tongke Electronic Co.,LTD Silicon Epitaxial Planar Switching Diode FAST SWITCHING DIODE 1N4148WS SOD-323 FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance z MARKING: T4 1N4148WS T4 The marking bar indicates the cathode Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW RθJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient 1 www.tongke888.com 400-6922-883 东莞市通科电子有限公司 1N4148WS DongGuan Tongke Electronic Co.,LTD Silicon Epitaxial Planar Switching Diode ELECTRICAL CHARACTERISTICS Electrical Ratings @Ta=25℃ Parameter Symbol Typ Min Max Unit Conditions VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns Forward voltage Reverse current 2 IF=IR=10mA Irr=0.1XIR,RL=100Ω www.tongke888.com 400-6922-883 东莞市通科电子有限公司 1N4148WS DongGuan Tongke Electronic Co.,LTD Silicon Epitaxial Planar Switching Diode Typical Characteristics Forward Characteristics Reverse 1000 200 Characteristics 100 (nA) (mA) Ta=100℃ REVERSE CURRENT IR T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 1 0.1 0.01 0.0 Ta=25℃ 10 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 40 20 (V) REVERSE VOLTAGE Capacitance Characteristics 1.2 100 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.0 200 150 100 50 0.8 0 0 5 10 REVERSE VOLTAGE 15 VR 20 0 (V) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta www.tongke888.com 125 150 (℃ ) 400-6922-883 东莞市通科电子有限公司 1N4148WS DongGuan Tongke Electronic Co.,LTD Silicon Epitaxial Planar Switching Diode SOD-323 Package Outline Dimensions 4 www.tongke888.com 400-6922-883
1N4148WS 价格&库存

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