PESD1LIN,115

PESD1LIN LIN-bus ESD protection diode Rev. 3 — 31 May 2011 Product data sheet 1. Product profile 1.1 General description PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect Network (LIN) bus line from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features and benefits  ESD protection of one automotive LIN-bus line  Asymmetrical diode configuration ensures an optimized protection against ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)  Max. peak pulse power: PPP = 160 W at tp = 8/20 s  Low clamping voltage: VCL = 40 V at IPP = 1 A  Ultra low leakage current: IRM < 1 nA  ESD protection of up to 23 kV  IEC 61000-4-2, level 4 (ESD)  IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 s  AEC-Q101 qualified 1.3 Applications  LIN-bus protection  Automotive applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd Min Typ Max Unit PESD1LIN (15 V) - - 15 V PESD1LIN (24 V) - - 24 V - 13 17 pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESD1LIN Nexperia LIN-bus ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode 1 (15 V) 2 cathode 2 (24 V) 1 Graphic symbol 2 1 2 006aab041 3. Ordering information Table 3. Ordering information Type number PESD1LIN Package Name Description Version SC-76 plastic surface-mounted package; 2 leads SOD323 4. Marking Table 4. Marking codes Type number Marking code PESD1LIN AM 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit tp = 8/20 s [1] PPP peak pulse power IPP peak pulse current - 160 W tp = 8/20 s [1] - 3 A Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] PESD1LIN Product data sheet Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 © Nexperia B.V. 2017. All rights reserved 2 of 12 PESD1LIN Nexperia LIN-bus ESD protection diode Table 6. ESD maximum ratings Symbol Parameter Conditions electrostatic discharge voltage VESD IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [1] Min Max Unit - 23 kV - 10 kV Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 s pulse waveform according to IEC 61000-4-5 PESD1LIN Product data sheet 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 May 2011 © Nexperia B.V. 2017. All rights reserved 3 of 12 PESD1LIN Nexperia LIN-bus ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage PESD1LIN (15 V) - - 15 V PESD1LIN (24 V) - - 24 V reverse leakage current IRM PESD1LIN (15 V) VRWM = 15 V -