WSP6946

WSP6946 Dual N-Ch MOSFET General Description Product Summery The WSP6946 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 60V 33mΩ 6.5A Applications The WSP6946 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOP-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 6.5 A 1 4.5 A 24 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 12 mJ IAS Avalanche Current 16 A Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 Max. Unit --- 90 ℃/W --- 50 ℃/W Dec.2014 WSP6946 Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=6.3A --- 33 45 --- 37 50 1.0 2.0 3.0 V --- -4.8 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=4A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 28.3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (10V) --- 14 20 Qgs Gate-Source Charge --- 2.6 --- Qgd Gate-Drain Charge --- 2.2 --- --- 8 15 Td(on) VDS=48V , VGS=10V , ID=6.3A Turn-On Delay Time uA nC Rise Time VDD=30V , VGEN=10V , RG=6Ω --- 6 11 Turn-Off Delay Time ID=4A ,RL=30Ω --- 23 42 Fall Time --- 6 11 Ciss Input Capacitance --- 670 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance --- 35 --- Min. Typ. Max. Unit --- --- mJ Typ. Max. Unit --- --- 2.5 A --- --- 24 A --- --- 1.1 V --- 20 --- nS --- 18 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=12A 10 Diode Characteristics Parameter Symbol Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=6.3A , dI/dt=100A/µs , TJ=25℃ Min. Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t