WST3325

WST3325 P-Ch MOSFET General Description Product Summery TheWST3325 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 42mΩ -5.6A Applications The WST3325 meet the RoHS and Green Product requirement , with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features SOT-23-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 -5.6 A ID@TC=70℃ 1 -4.5 A -16 A IDM Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Dec.2014 WST3325 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.016 --- V/℃ VGS=-4.5V , ID=-3A --- 42 55 VGS=-2.5V , ID=-2A --- 56 70 VGS=-1.8V , ID=-1A mΩ --- 73 85 -0.3 -0.5 -1.0 V --- 3.97 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 14 --- S Qg Total Gate Charge (-4.5V) --- 12.1 16.9 Qgs Gate-Source Charge --- 1.5 2.1 Qgd Gate-Drain Charge --- 3.1 4.3 8.8 Td(on) VDS=-15V , VGS=-4.5V , ID=-3A Turn-On Delay Time uA nC --- 4.4 Rise Time VDD=-10V , VGS=-4.5V , --- 45 81 Turn-Off Delay Time RG=3.3Ω, ID=-3A --- 48.4 97 Fall Time --- 30.4 60.8 Ciss Input Capacitance --- 938 --- Coss Output Capacitance --- 108 --- Crss Reverse Transfer Capacitance --- 96 --- Min. Typ. Max. --- --- -1 A --- --- -16 A --- --- -1 V --- 28 --- nS --- 9 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge 2,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Unit Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t