2SA1037-FR

Plastic-Encapsulate Transistors FEATURES 2SA1037(PNP) Excellent hFE linearity. Complments the 2SC2412 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current -Continuous IC -150 mA 1. BASE Collector Power Dissipation PC 200 mW 2. EMITTER Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter SOT-23 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage VEBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA 120 560 -0.5 Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 4.0 CLASSIFICATION OF Marking Range V MHz 5.0 pF hFE FQ FR FS 120-270 180-390 270-560 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SA1037 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2