2SA812-M6

Plastic-Encapsulate Transistors FEATURES 2SA812(PNP) Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Parameter 1. BASE Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100μA, IE=0 -60 V Collector-emitter breakdown voltage VCEO IC= -1mA, IB=0 -50 V Emitter-base breakdown voltage VEBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB=- 60 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=- 6V, IC= -1mA VCE(sat) Collector-emitter saturation voltage 90 600 IC=-100mA, IB= -10mA V -0.68 V Base-emitter voltage VBE Transition frequency fT VCE=-6V, IC= -10mA 180 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF CLASSIFICATION OF Marking Range IC=-1mA, VCE=-6V -0.3 -0.58 hFE M4 M5 M6 M7 90-180 135-270 200-400 300-600 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SA812 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2