2SC2714

Plastic-Encapsulate Transistors FEATURES 2SC2714 (NPN) Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current -Continuous IC 20 mA 1. BASE Collector Power Dissipation PC 100 mW 2. EMITTER Junction Temperature TJ 125 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 3. COLLECTO unless otherwise specified) Symbol Parameter SOT-23 Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=10μA,IE=0 40 V Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage VEBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA Transition frequency fT VCE=6V,IC=1mA 550 MHz Reverse Transfer capacitance Cre VCB=6V,IE=0,f=1MHz 0.7 pF Noise figure NF VCE=6V,Ic=1mA,f=100MHZ 2.5 CLASSIFICATION OF Marking Range 40 200 5 dB hFE QR 40-80 GUANGDONG HOTTECH QO 70-140 INDUSTRIAL CO., LTD QY 100 -200 Page:P2-P1 Plastic-Encapsulate Transistors 2SC2714 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2