MMBTA94

Plastic-Encapsulate Transistors FEATURES MMBTA94(PNP) High Breakdown Voltage Complement to MMBTA44 Marking : 4D MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -400 V DCollector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Current -Pulsed ICM -300 mA Collector Power Dissipation PC 350 mW RΘJA 357 /W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Thermal Resistance From Junction To Ambient ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions 1. BASE 2. EMITTER SOT-23 3. COLLECTO Min Typ Max Unit Collector-base breakdown voltage V CBO IC=-100µA, IE=0 -400 V Collector-emitter breakdown voltage V CEO IC=-1mA, IB=0 -400 V Emitter-base breakdown voltage V EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-400V, IB=0 -5 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) VCE=-10V, IC=-10mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100mA 40 hFE(4) VCE=-10V, IC=-50mA 40 VCE(sat)1 IC=-10mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50mA, IB=-5mA -0.3 V VBE(sat) IC=-10mA, IB=-1mA -0.75 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE=-20V,IC=-10mA, Transition frequency fT GUANGDONG HOTTECH f=30MHz INDUSTRIAL CO., LTD 50 MHz Page:P2-P1 Plastic-Encapsulate Transistors MMBTA94 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2