2SD965-HD

Plastic-Encapsulate Transistors FEATURES 2SD965 (NPN) • Collector current up to 5A • Collector-Emitter voltage up to 20V Marking: D965 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 3 A Collector Power dissipation PC 0.5 W Tstg -55to +150 Storage Temperature ELECTRICAL CHARACTERISTICS ( @ Ta=25 1. BASE 2. COLLECTO SOT-89 3. EMITTER unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage VCBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC=1mA ,IB=0 20 V Emitter-base breakdown voltage VEBO IE=10μA, IC=0 7 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 uA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 uA Collector-emitter saturation voltage VCE(sat) IC/IB=3A/0.1A 1 V VCE=2V, IC=1mA DC current gain(note) hFE 230 VCE=2V, IC=2A 150 fT VCE=6V,IC=50mA Output Capacitance Cob VCB=20V, f=1MHz ,IE=0A Max Unit 200 VCE=2V, IC=0.5A Current gain bandwidth product Typ 800 150 MHz 50 pF CLASSIFICATION OF hFE Rank Range Q 230 -380 GUANGDONG HOTTECH R S 340-600 560-800 INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SD965 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2