UMW BSS138

R UMW SMD Type UMW BSS138 N-Channel MOSFET ■ Features ● VDS (V) = 50V SOT–23 ● ID = 300 mA (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 10V) ● RDS(ON) ＜ 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. GATE MARKING 2. SOURCE 3. DRAIN SS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 50 Drain-Gate Voltage RGS≤ 20KΩ VDG 50 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW RthJA 417 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS , ID=250μA Gate Threshold Voltage Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Min Typ Max 50 0.7 V 0.5 uA ±10 uA 1.5 V VGS=10V, ID=500mA 2.5 VGS=2.5V, ID=500mA 3.5 VDS=25V, ID=0.3A,f=1KHz 100 Ω mS 50 VGS=0V, VDS=10V, f=1MHz 25 Reverse Transfer Capacitance Crss 8 Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) www.umw-ic.com Unit VDS=30V, ID=0.3A,RG=50Ω 1 20 pF ns 友台半导体有限公司 R UMW SMD Type UMW BSS138 RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE ( ■ Typical Characterisitics 0.6 V GS = 3.5V T j = 25°C ID , DRAIN-SOURC E CURRENT (A) 0.5 V GS = 3.25V 0.4 V GS = 3.0V 0.3 V GS = 2.75V 0.2 V GS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 10 9 2.45 2.25 2.05 V GS = 10V ID = 0.5A 1.85 1.65 1.45 V GS = 4.5V ID = 0.1A 1.25 1.05 0.85 0.65 -55 2 V DS = 1V VGS(th), GATE THRESHOLD VOLTAGE (V) 0.8 I D , DRAIN-SOURCE CURRENT (A) 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature V DS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Currentvs.Drain-SourceVoltage 0.7 95 45 -5 -55° C 0.6 25 ° C 0.5 150 ° C 0.4 0.3 0.2 0.1 1.8 1.6 ID = 250uA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 -55 -40 -25 -10 5 0 0.5 1 1.5 2 2.5 3.5 3 4 4.5 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 6 20 35 50 65 80 95 110 125 140 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 1 V GS = 2.5V 5 ID, DIODE CURRENT (A) 150 ° C 4 3 2 25 ° C 1 0.1 150 ° C -55° C 0.01 25 ° C -55° C 0.001 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 6 Body Diode Current vs. Body Diode Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Drain-Source On Resistance vs. Drain Current www.umw-ic.com 0 2 友台半导体有限公司 R UMW SMD Type UMW BSS138 ■ Typical Characterisitics 3.5 100 V GS = 10V 3 V GS = 0V f = 1MHz C, CAPACITANCE (pF) 150 ° C 2.5 2 1.5 25 ° C 1 -55° C C iSS 10 C OSS 0.5 C rSS 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 1 0.5 ID, DRAIN CURRENT (A) Fig. 7 Drain-Source On Resistance vs. Drain Current www.umw-ic.com 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 8 Capacitance vs. Drain Source Voltage 3 友台半导体有限公司