AC3400A

AC3400A 亚芯电子（深圳）有限公司 B N03B 30V /5.7A Single N Power MOSFET 6N03B N V General Description 30V /5.7A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation AC3400A SOT23-3 A09T 3000 Parameter 30 V 22.4 mΩ 35.2 mΩ 5.7 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 9.1 IAR 1.8 EAR 4.2 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range 4.7 IDM G Repetitive avalanche energy L=0.1mH 5.7 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 80 120 °C/W 160 192 °C/W 48 76 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC3400A 30V /5.7A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 30 V 1 5 uA ±100 nA 1.1 1.5 V VGS=-10V, ID=5.7A 22.4 32.0 VGS=4.5V, ID=5.7A 35.2 45.8 Forward Transconductance VDS=5V, ID=5.7A 81 Diode Forward Voltage IS=1A,VGS=16V 0.72 0.7 S 1 V 5.7 A Typ Max Units 630 768 pF 75 92 pF 50 59 pF 0.9 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.8 tD(on) Turn-On DelayTime 4.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 6 VGS=10V, VDS=15V, ID=5.7A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3 1.26 3.4 11.9 nC ns 3.825 IF=-8A, dI/dt=500A/µs 8.5 ns IF=18A, dI/dt=500A/µs 2.6 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC3400A 30V /5.7A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC3400A 30V /5.7A Single N Power MOSFET Rev0：Oct 2018