AC4407

AC4407A 亚芯电子（深圳）有限公司 C P03C -30V /-12A Single P Power MOSFET 12P03C P V General Description -30V /-12A Single P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation AC4407A SOP8 4407A 3000 Parameter -30 V 11.9 mΩ 18.7 mΩ -12 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 25 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -19.2 IAR -3.8 EAR -8.8 TA=25°C A A mJ 3.1 PD TA=70°C Junction and Storage Temperature Range -10.0 IDM G Repetitive avalanche energy L=0.1mH -12.0 ID W 2 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 42 63 °C/W 85 102 °C/W 25 40 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC4407A -30V /-12A Single P Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units -30 V -1 -5 uA ±100 nA -2.3 -3 V VGS=-10V, ID=-12A 11.9 17.0 VGS=-4.5V, ID=-12A 18.7 24.3 Forward Transconductance VDS=-5V, ID=-12A 94 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.5 S -1 V -12 A Typ Max Units 2060 2513 pF 370 455 pF 295 351 pF 5 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 10 tD(on) Turn-On DelayTime 15 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 30 VGS=-10V, VDS=-15V, ID=-12A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω #REF! 7 12 42 nC ns 13.5 IF=-8A, dI/dt=500A/µs 30 ns IF=18A, dI/dt=500A/µs 22 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC4407A -30V /-12A Single P Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC4407A -30V /-12A Single P Power MOSFET Rev0：Oct 2018