PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Features
⚫
⚫
VDS= -20V ID= -2A
RDS(ON) =120mΩ (typ) @ VGS=-2.5V
RDS(ON) =88mΩ (typ) @ VGS=-4.5V
⚫
High power and current handing capability
⚫
Halogen and Antimony Free
⚫
Surface mount package
SOT-23
1. Gate 2.Source
Marking : S01
3.Drain
Drain
3
Applications
⚫
Battery protection
⚫
Load switch
⚫
Power management
1
Gate
2
Source
Absolute Maximum Ratings
TC=25 ℃ unless otherwise noted
Symbol
Value
Drain-Source Voltage
Parameter
VDS
- 20
Gate-Source Voltage
VGS
± 12
ID
-2
IDM
- 10
PD
0.7
W
TJ, TSTG
- 55 to 150
°C
Continuous Drain Current
Pulsed Drain Current
Note1
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Unit
V
A
Thermal Characteristics
Parameter
Thermal Resistance,Junction-to-Ambient Note2
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Revision:1.0 Oct-2018
Symbol
RθJA
Value
178
Unit
℃/W
1/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Electrical Characteristics
TC=25℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static Parameters
V(BR)DSS
VGS = 0 V, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
-1
µA
Gate-Source Threshold Voltage Note3
VGS(th)
VDS = VGS, ID = - 250 µA
-1
V
Drain-Source On-State Resistance Note3
RDS(on)
Drain-Source Breakdown Voltage
- 20
V
- 0.4
VGS = - 4.5 V, ID = - 2 A
88
120
VGS = - 2.5 V, ID = - 1 A
120
180
mΩ
Dynamic Parameters
4
Forward Transconductance Note3
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
55
Total Gate Charge
Qg
2.9
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.75
td(on)
11
20
35
60
30
50
10
20
VDS = - 5 V, ID = - 2 A
S
405
VDS = - 10 V, VGS = 0 V, f = 1 MHz
75
pF
Switching Parameters
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDS = - 10 V, VGS = - 4.5 V, ID = - 2A
VDD = - 10 V, RL = 10 Ω ID = - 1 A,
VGEN = - 4.5 V, RG = 1 Ω
tf
0.45
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
-2
A
- 1.2
V
Note2
Body Diode Voltage Note3
VSD
IS = - 2 A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
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Revision:1.0 Oct-2018
2/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Typical Characteristics Curves
10
12
VGS = 2 V
VGS = 5 thru 2.5 V
V DS=5V
10
-I D - Drain Current (A)
-I D - Drain Current (A)
8
6
VGS = 1.5 V
4
8
6
4
125℃
2
25℃
2
VGS = 1 V
0
0.0
0.5
1.0
1.5
0
2.0
0
0.5
175
800
150
600
VGS = - 2.5 V
100
2
2.5
Ciss
400
200
Coss
Crss
VGS = - 4.5 V
75
0
0
2
4
8
0
10
5
-ID - Drain Current (A)
10
15
20
-VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
4
1.5
ID = -2 A
ID = -2 A
3
R DS(on) - On-Resistance
(Normalized)
-VGS - Gate-to-Source Voltage (V)
1.5
Transfer Characteristics
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Output Characteristics
125
1
-VGS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
VDS = -10 V
2
1
1.3
1.1
VGS = -4.5 V
0.9
VGS = -2.5 V
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
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Revision:1.0 Oct-2018
4
5
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
10
340
I D =-2V
300
R DS(on) - On-Resistance ()
-I S - Source Current (A )
1
125℃
0.1
0.01
25℃
260
220
125℃
180
140
0.001
100
25℃
0.0001
60
0.0
0.2
0.4
0.6
0.8
1.0
-VSD - Source-to-Drain Voltage (V)
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward
Voltage
10
0.4
100 µs
Limited by RDS(on)*
0.3
1 ms
I D - Drain Current (A)
VGS(th) Variance (V)
ID = 250 µA
0.2
ID = 1 mA
0.1
0.0
1
10 ms
100 ms
0.1
1s
10 s
100 s, DC
TA = 25 °C
Single Pulse
- 0.1
BVDSS Limited
- 0.2
- 50
- 25
0
25
50
75
100
125
0.01
0.1
150
TJ - Temperature (°C)
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
> minimum VGS at which R DS(on) is specified
Threshold Voltage
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Revision:1.0 Oct-2018
4/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Package Outline
SOT-23(TO-236)
0.8
Max.
A
0.900
1.025
1.150
A1
0.000
0.050
0.100
b
c
D
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
E
1.200
1.300
1.400
HE
2.250
2.400
2.550
e
1.800
1.900
2.000
0.550REF
L1
L
0.300
θ
0o
0.500
8o
2.2
Typ.
0.8
1.0
Min.
1.0
Dimensions in millimeter
Symbol
1.9
SOT-23 (TO-236)
Recommended soldering pad
Ordering Information
Device
PJM2301PSA-S
www.pingjingsemi.com
Revision:1.0 Oct-2018
Package
SOT-23
Shipping
3000/Reel&Tape(7inch)
5/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Conditions of Soldering And Storage
◆
Recommended condition of reflow soldering
Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust
the following parameters:
⚫
Time length of peak temperature (longer)
⚫
Time length of soldering (longer)
⚫
Thickness of solder paste (thicker)
◆
Conditions of hand soldering
⚫
Temperature: 370 ℃
⚫
Time: 3s max.
⚫
Times: one time
◆
⚫
Storage conditions
Temperature
5 to 40 ℃
⚫
Humidity
30 to 80% RH
⚫
Recommended period
One year after manufacturing
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Revision:1.0 Oct-2018
6/7
PJM2301PSA-S
P- Enhancement Mode Field Effect Transistor
Package Specifications
◆
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23 (TO-236)
1
3
2
Carrier Tape
30,000 pcs per box
10 reels per box
220
195
120,000 pcs per carton
4 boxes per carton
435
210
◆
Embossed tape and reel data
D
A
T2
T1
4.0
4.0
B
8.0
C
E
1Pin
G
N
Tape (8mm)
F
Reel (7'')
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Revision:1.0 Oct-2018
Symbol
A
B
C
E
F
D
T1
T2
N
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
3.15±0.1
G
1.25±0.1
7/7
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