PBSS5250TH
50 V, 2 A PNP low VCEsat (BISS) transistor
9 August 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat genereation
High temperature applications up to 175 °C
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
Power management
DC-to-DC conversion
Supply line switches
Battery charger switches
Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-50
V
IC
collector current
-
-
-2
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-3
A
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; Tamb = 25 °C
-
-
150
mΩ
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
[1]
PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
E
emitter
3
C
collector
Simplified outline
Graphic symbol
3
C
B
E
1
2
sym132
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
PBSS5250TH
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PBSS5250TH
FH%
[1]
% = placeholder for manufacturing site code
PBSS5250TH
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Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-50
V
VCEO
collector-emitter voltage
open base
-
-50
V
VEBO
emitter-base voltage
open collector
-
-7
V
IC
collector current
-
-2
A
ICM
peak collector current
-
-3
A
IB
base current
-
-300
mA
Ptot
total power dissipation
[1]
-
360
mW
[2]
-
575
mW
[3]
-
600
mW
[4]
-
700
mW
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm .
aaa-026656
800
(1)
Ptot
(mw)
(2)
600
(3)
400
(4)
200
0
-75
25
125
2
Tamb (°C)
225
(1) FR4 PCB, 4-layer copper, 1 cm
(2) FR4 PCB, 4-layer copper, standard footprint
2
(3) FR4 PCB, single sided copper, 1 cm
(4) FR4 PCB, single sided copper, standard footprint
Fig. 1.
Power derating curves for SOT23
PBSS5250TH
Product data sheet
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
aaa-026657
-10
IC
(A)
tp = 10 µs
-1
tp = 100 µs
tp = 1 ms
tp = 10 ms
-10-1
tp = 100 ms
DC; FR4 PCB, 4-layer copper, collector
mounting pad 1 cm2
tp = 1 s
-10-2
DC
-10-3
-10-1
-1
-10
-102
-103
VCE (V)
Unless otherwise specified: Tamb = 25 °C; single pulse;
FR4 PCB, single-sided copper, standard footprint
Fig. 2.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of collectoremitter voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
[3]
[4]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
417
K/W
[2]
-
-
261
K/W
[3]
-
-
250
K/W
[4]
-
-
215
K/W
-
75
-
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm .
PBSS5250TH
Product data sheet
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
aaa-026658
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102 0.33
0.50
0.20
0.10
0.05
10
0.02
0.01
1 0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, single sided copper, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026659
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
0.01
1 0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
2
tp (s)
103
FR4 PCB, single sided copper, mounting pad for drain 1 cm
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5250TH
Product data sheet
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
aaa-026660
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, 4-layer copper, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026661
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
Fig. 6.
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5250TH
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Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
breakdown voltage
IC = -100 µA; IE = 0 A; Tamb = 25 °C
-50
-
-
V
V(BR)CEO
collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A; Tamb = 25 °C
-50
-
-
V
V(BR)EBO
emitter-base
breakdown voltage
(collector open)
IC = 0 mA; IE = -100 µA; Tamb = 25 °C
-7
-
-
V
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -50 V; IE = 0 A; Tj = 150 °C
-
-
-5
µA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -2 V; IC = -100 mA; Tamb = 25 °C
[1]
200
-
-
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
[1]
200
-
-
VCE = -2 V; IC = -1 A; Tamb = 25 °C
[1]
200
-
-
VCE = -2 V; IC = -2 A; Tamb = 25 °C
[1]
130
-
-
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
[1]
-
-
-90
mV
IC = -1 A; IB = -50 mA; Tamb = 25 °C
[1]
-
-
-180
mV
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1]
-
-
-300
mV
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
[1]
-
-
150
mΩ
VBEsat
base-emitter saturation IC = -2 A; IB = -100 mA; Tamb = 25 °C
voltage
[1]
-
-
-1.1
V
VBE
base-emitter voltage
VCE = -2 V; IC = -1 A
[1]
-
-
-1.2
V
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
35
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PBSS5250TH
Product data sheet
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
aaa-026662
800
hFE
VBE
(mV)
(1)
(2)
600
(3)
(4)
(1)
- 800
(5)
400
mld886
- 1200
(2)
(6)
(3)
- 400
(7)
200
(8)
0
-10-1
-1
-10
-102
-1
- 10
Fig. 8.
- 103
- 104
IC (mA)
Base-emitter voltage as a function of collector
current; typical values
DC current gain as a function of collector
current; typical values
mld887
- 1300
VBEsat
(mV)
mld888
- 1300
VBEsat
(mV)
(1)
- 900
(1)
- 900
(2)
(2)
(3)
(3)
- 500
- 100
- 10- 1
- 500
-1
- 10
- 102
- 103
- 104
IC (mA)
- 100
- 10- 1
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 9.
- 102
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
VCE = - 2 V
(1) Tamb = 175 °C
(2) Tamb = 150 °C
(3) Tamb = 125 °C
(4) Tamb = 100 °C
(5) Tamb = 85 °C
(6) Tamb = 25 °C
(7) Tamb = -40 °C
(8) Tamb = -55 °C
Fig. 7.
0
- 10- 1
-103
-104
IC (mA)
-1
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Base-emitter saturation voltage as a function of Fig. 10. Base-emitter saturation voltage as a function of
collector current; typical values
collector current; typical values
PBSS5250TH
Product data sheet
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
mld889
- 103
mld890
- 103
VCEsat
(mV)
VCEsat
(mV)
- 102
- 102
(1)
(2)
(1)
- 10
(3)
(2)
- 10
(3)
-1
- 10- 1
-1
- 10
- 102
-1
- 10- 1
- 103
- 104
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
-1
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector-emitter saturation voltage as a
function of collector current; typical values
mld891
- 104
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
mld892
- 104
VCEsat
(mV)
VCEsat
(mV)
- 103
- 103
- 102
(1)
(2)
- 102
(3)
(1)
- 10
-1
- 10- 1
(3) (2)
-1
- 10
- 102
- 10
- 10- 1
- 103
- 104
IC (mA)
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
Product data sheet
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 100
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
IC/IB = 50
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
PBSS5250TH
-1
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
aaa-026691
103
RCEsat
(Ω)
102
10
1
(1)
10-1
(2)
10-2
-10-1
-1
(3)
-102
-10
-103
-104
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 15. Collector-emitter saturation resistance as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig. 16. Package outline TO-236AB (SOT23)
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PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 17. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 18. Wave soldering footprint for TO-236AB (SOT23)
PBSS5250TH
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50 V, 2 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5250TH v.2
20170809
Product data sheet
-
PBSS5250TH v.1
Modifications:
PBSS5250TH v.1
PBSS5250TH
Product data sheet
•
Rth(j-sp) maximum value revised to typical value
20170421
Product data sheet
-
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-
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12 / 14
PBSS5250TH
Nexperia
50 V, 2 A PNP low VCEsat (BISS) transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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data sheet shall define the specification of the product as agreed between
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or warranty that such applications will be suitable for the specified use
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PBSS5250TH
Product data sheet
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50 V, 2 A PNP low VCEsat (BISS) transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 7
11. Test information....................................................... 10
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
©
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 August 2017
PBSS5250TH
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 August 2017
©
Nexperia B.V. 2017. All rights reserved
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