2SA1758

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1758 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -2V, IC= -2A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -6A, IB= -0.3A) APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1758 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA ; IC= 0 -5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE=0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE-1 DC Current Gain IC= -1A ; VCE= -2V 100 hFE-2 DC Current Gain IC= -2A ; VCE= -2V 60 Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V fT  CONDITIONS MIN TYP. MAX UNIT 320 90 MHz hFE-2 Classifications D E F 60-120 100-200 160-320 SPTECH website：www.superic-tech.com 2