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ES1D

ES1D

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    VR=200V IF=1A VF=0.95V IR=5uA trr=35nS

  • 数据手册
  • 价格&库存
ES1D 数据手册
ES1AG THRU ES1JG Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.110(2.80) 0.094(2.40) 0.067 (1.70) 0.051 (1.30) 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.42) 0.078(1.98) 0.060(1.52) 0.030(0.76) Mechanical Data 0.008(0.203)MAX. 0.208(5.30) 0.188(4.80) Case : JEDEC DO-214AC/SMA Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.002 ounce, 0.055 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter ES1AG ES1BG ES1CG ES1DG ES1EG ES1GG ES1JG SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DCblocking voltage TA=25℃ VRMM VRMS VDC I(AV) MDD ES1A MDD ES1B MDD ES1C MDD ES1D MDD ES1E MDD ES1G MDD ES1J 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 IFSM VF IR TA=125℃ UNITS V V V 1.0 A 30 A 0.95 1.25 5.0 100.0 1.7 V μA trr 35 ns CJ 15.0 pF Typical thermal resistance (NOTE 3) RJA 75.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃ Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.P.C.B. mounted with 1.0x1.0”(2.54x2.54cm) copper pad areas. 3.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 4.The typical data above is for referenceonly. DN:T19704A0 https://www.microdiode.com Rev:2019A0 Page :1 ES1AG THRU ES1JG Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Ratings And Characteristic Curves 10 ohm Noninductive 50 ohm Noninductive t rr +0.5 D.U.T + - PULSE GENERATOR Note 2 25Vdc approx 0 -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half wave resistive or inductive 0.0 25 50 75 100 125 150 175 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0 Case Temperature (°C) Junction Capacitance (pF) Instaneous Forward Current (A) 30 T J =25°C ES1A~ES1D ES1E/ES1G 0.1 ES1J 0.01 0 0.5 100 Fig.5 Typical Junction Capacitance 1.0 0.001 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 10 40 20 1.5 1.0 2.0 2.5 Instaneous Forward Voltage (V) 25 20 15 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 05 0.1 1 10 100 Reverse Voltage (V) Peak Forward Surge Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surge Current 35 30 25 20 15 10 05 00 8.3 ms Single Half Sine Wave (JEDEC Method) 10 1 100 Number of Cycles The curve above is for reference only. https://www.microdiode.com Rev:2019A0 Page :2 ES1AG THRU ES1JG Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SMA A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.33 2.36 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.28 12.00 18.00 E F B A Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 2,000 4.0 4,000 183*155*183 178 CARTON SIZE (m/m) CARTON (pcs) APPROX. GROSS WEIGHT (kg) SMA 7" SMA 11" 5,000 4.0 10,000 290*290*38 330 310*310*360 80,000 11.0 SMA 13" 7,500 4.0 15,000 335*335*38 330 350*330*360 120,000 14.5 382*356*392 160,000 16.0 Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.90 0.154 D 2.41 0.095 E 5.45 0.215 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). https://www.microdiode.com Rev:2019A0 Page :3

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ES1D
  •  国内价格
  • 1+0.04799
  • 30+0.04618
  • 100+0.04258
  • 500+0.03897
  • 1000+0.03716

库存:1335

ES1D
    •  国内价格
    • 1+0.07680

    库存:0

    ES1D
    •  国内价格
    • 10+0.04998
    • 50+0.04623
    • 200+0.04311
    • 600+0.03999
    • 1500+0.03749
    • 3000+0.03592

    库存:8