74HCT2G16GWH

74HC2G16; 74HCT2G16 Dual buffer gate Rev. 1 — 2 November 2015 Product data sheet 1. General description The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers. 2. Features and benefits          Wide supply voltage range from 2.0 V to 6.0 V Complies with JEDEC standard no. 7A High noise immunity ESD protection:  HBM JESD22-A114-D exceeds 2000 V  MM JESD22-A115-A exceeds 200 V Low power dissipation Balanced propagation delays Unlimited input rise and fall times Multiple package options Specified from 40 C to +85 C and 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74HC2G16GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 74HC2G16GV 40 C to +125 C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 74HCT2G16GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 74HCT2G16GV 40 C to +125 C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 2. Marking Type number Marking code 74HC2G16GW P6 74HC2G16GV P6 74HCT2G16GW U6 74HCT2G16GV U6 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate 5. Functional diagram  $ <   $ <       $ < PQE PQE Fig 1. Logic symbol  DDF Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 6. Pinning information 6.1 Pinning +&* +&7* $   < *1'   9&& $   < DDD Fig 4. Pin configuration 6.2 Pin description Table 3. Pin description Symbol Pin Description 1A 1 data input GND 2 ground (0 V) 2A 3 data input 2Y 4 data output VCC 5 supply voltage 1Y 6 data output 74HC_HCT2G16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 2 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate 7. Functional description Table 4. Function table[1] Input Output nA nY L L H H [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions Min Max Unit 0.5 +7.0 V input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V [1] - 20 mA IO output current VO = 0.5 V to VCC + 0.5 V [1] - 25 mA supply current [1] - +50 mA IGND ground current [1] - 50 mA Tstg storage temperature Ptot total power dissipation IIK ICC 65 [2] - [1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SC-88 and SC-74 packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. +150 C 250 mW 9. Recommended operating conditions Table 6. Symbol Recommended operating conditions Parameter Conditions Min Typ Max Unit 2.0 5.0 6.0 V Type 74HC2G16 VCC supply voltage VI input voltage 0 - VCC V VO output voltage 0 - VCC V Tamb ambient temperature 40 +25 +125 C tr rise time VCC = 2.0 V - - 1000 ns VCC = 4.5 V - - 500 ns VCC = 6.0 V - - 400 ns VCC = 2.0 V - - 1000 ns VCC = 4.5 V - - 500 ns VCC = 6.0 V - - 400 ns tf fall time 74HC_HCT2G16 Product data sheet except for Schmitt trigger inputs except for Schmitt trigger inputs All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 3 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate Table 6. Recommended operating conditions …continued Symbol Parameter Conditions Min Typ Max Unit 4.5 5.0 5.5 V 0 - VCC V Type 74HCT2G16 VCC supply voltage VI input voltage VO output voltage Tamb ambient temperature tr rise time 0 - VCC V 40 +25 +125 C - - 500 ns - - 500 ns except for Schmitt trigger inputs VCC = 4.5 V tf fall time except for Schmitt trigger inputs VCC = 4.5 V 10. Static characteristics Table 7. Static characteristics for 74HC2G16 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ HIGH-level input voltage Max Unit VCC = 2.0 V 1.5 1.2 - V VCC = 4.5 V 3.15 2.4 - V VCC = 6.0 V 4.2 3.2 - V VCC = 2.0 V - 0.8 0.5 V Tamb = 25 C VIH VIL VOH VOL LOW-level input voltage HIGH-level output voltage LOW-level output voltage VCC = 4.5 V - 2.1 1.35 V VCC = 6.0 V - 2.8 1.8 V IO = 20 A; VCC = 2.0 V 1.9 2.0 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - V IO = 4.0 mA; VCC = 4.5 V 4.18 4.32 - V IO = 5.2 mA; VCC = 6.0 V 5.68 5.81 - V IO = 20 A; VCC = 2.0 V - 0 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 V VI = VIH or VIL VI = VIH or VIL II input leakage current VI = GND or VCC; VCC = 6.0 V - - 0.1 A ICC supply current VI = GND or VCC; IO = 0 A; - - 1.0 A - 1.5 - pF VCC = 6.0 V CI input capacitance 74HC_HCT2G16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 4 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate Table 7. Static characteristics for 74HC2G16 …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC = 2.0 V 1.5 - - VCC = 4.5 V 3.15 - - V VCC = 6.0 V 4.2 - - V VCC = 2.0 V - - 0.5 V VCC = 4.5 V - - 1.35 V VCC = 6.0 V - - 1.8 V IO = 20 A; VCC = 2.0 V 1.9 - - V IO = 20 A; VCC = 4.5 V 4.4 - - V IO = 20 A; VCC = 6.0 V 5.9 - - V IO = 4.0 mA; VCC = 4.5 V 4.13 - - V IO = 5.2 mA; VCC = 6.0 V 5.63 - - V Tamb = 40 C to +85 C VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage V VI = VIH or VIL VI = VIH or VIL IO = 20 A; VCC = 2.0 V - - 0.1 V IO = 20 A; VCC = 4.5 V - - 0.1 V IO = 20 A; VCC = 6.0 V - - 0.1 V IO = 4.0 mA; VCC = 4.5 V - - 0.33 V IO = 5.2 mA; VCC = 6.0 V - - 0.33 V II input leakage current VI = GND or VCC; VCC = 6.0 V - - 1.0 A ICC supply current VI = GND or VCC; IO = 0 A; - - 10.0 A VCC = 2.0 V 1.5 - - V VCC = 4.5 V 3.15 - - V VCC = 6.0 V Tamb = 40 C to +125 C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage 74HC_HCT2G16 Product data sheet VCC = 6.0 V 4.2 - - V VCC = 2.0 V - - 0.5 V VCC = 4.5 V - - 1.35 V VCC = 6.0 V - - 1.8 V IO = 20 A; VCC = 2.0 V 1.9 - - V IO = 20 A; VCC = 4.5 V 4.4 - - V IO = 20 A; VCC = 6.0 V 5.9 - - V IO = 4.0 mA; VCC = 4.5 V 3.7 - - V IO = 5.2 mA; VCC = 6.0 V 5.2 - - V VI = VIH or VIL All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 5 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate Table 7. Static characteristics for 74HC2G16 …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VOL LOW-level output voltage VI = VIH or VIL IO = 20 A; VCC = 2.0 V - - 0.1 V IO = 20 A; VCC = 4.5 V - - 0.1 V IO = 20 A; VCC = 6.0 V - - 0.1 V IO = 4.0 mA; VCC = 4.5 V - - 0.4 V IO = 5.2 mA; VCC = 6.0 V - - 0.4 V II input leakage current VI = GND or VCC; VCC = 6.0 V - - 1.0 A ICC supply current VI = GND or VCC; IO = 0 A; - - 20.0 A Max Unit VCC = 6.0 V Table 8. Static characteristics for 74HCT2G16 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Tamb = 25 C VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 V VOH HIGH-level output voltage VI = VIH or VIL IO = 20 A; VCC = 4.5 V 4.4 4.5 - V IO = 4.0 mA; VCC = 4.5 V 4.18 4.32 - V IO = 20 A; VCC = 4.5 V - 0 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 V VOL LOW-level output voltage VI = VIH or VIL II input leakage current VI = GND or VCC; VCC = 5.5 V - - 0.1 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 5.5 V - - 1.0 A ICC additional supply current VI = VCC  2.1 V; VCC = 4.5 V to 5.5 V; IO = 0 A - - 300 A CI input capacitance - 1.5 - pF VCC = 4.5 V to 5.5 V 2.0 - - V - - 0.8 V IO = 20 A; VCC = 4.5 V 4.4 - - V IO = 4.0 mA; VCC = 4.5 V 4.13 - - V IO = 20 A; VCC = 4.5 V - - 0.1 V IO = 4.0 mA; VCC = 4.5 V - - 0.33 V Tamb = 40 C to +85 C VIH HIGH-level input voltage VIL LOW-level input voltage VCC = 4.5 V to 5.5 V VOH HIGH-level output voltage VI = VIH or VIL VOL LOW-level output voltage VI = VIH or VIL II input leakage current VI = GND or VCC; VCC = 5.5 V - - 1.0 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 5.5 V - - 10.0 A ICC additional supply current VI = VCC  2.1 V; VCC = 4.5 V to 5.5 V; IO = 0 A - - 375 A 74HC_HCT2G16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 6 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate Table 8. Static characteristics for 74HCT2G16 …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC = 4.5 V to 5.5 V 2.0 - - V - - 0.8 V IO = 20 A; VCC = 4.5 V 4.4 - - V IO = 4.0 mA; VCC = 4.5 V 3.7 - - V IO = 20 A; VCC = 4.5 V - - 0.1 V IO = 4.0 mA; VCC = 4.5 V - - 0.4 V Tamb = 40 C to +125 C VIH HIGH-level input voltage VIL LOW-level input voltage VCC = 4.5 V to 5.5 V VOH HIGH-level output voltage VI = VIH or VIL VOL LOW-level output voltage VI = VIH or VIL II input leakage current VI = GND or VCC; VCC = 5.5 V - - 1.0 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 5.5 V - - 20.0 A ICC additional supply current VI = VCC  2.1 V; VCC = 4.5 V to 5.5 V; IO = 0 A - - 410 A 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Min Max (85 C) Max (125 C) VCC = 2.0 V; CL = 50 pF - 29 75 - 95 125 ns VCC = 4.5 V; CL = 50 pF - 9 15 - 19 25 ns - 8 13 - 16 20 ns VCC = 2.0 V; CL = 50 pF - 18 75 - 95 125 ns VCC = 4.5 V; CL = 50 pF - 6 15 - 19 25 ns - 5 13 - 16 20 ns - 10 - - - - pF 74HC2G16 tpd propagation delay nA to nY; see Figure 5 [1] VCC = 6.0 V; CL = 50 pF tt transition time nY; see Figure 5 [2] VCC = 6.0 V; CL = 50 pF CPD power dissipation capacitance 74HC_HCT2G16 Product data sheet VI = GND to VCC [3] All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2015 © Nexperia B.V. 2017. All rights reserved 7 of 15 74HC2G16; 74HCT2G16 Nexperia Dual buffer gate Table 9. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Min Max (85 C) Max (125 C) - 10 18 - 23 29 ns - 6 15 - 19 25 ns - 9 - - - - pF 74HCT2G16 propagation delay tpd [1] nA to nY; see Figure 5 VCC = 4.5 V; CL = 50 pF tt transition time CPD power dissipation capacitance [2] nY; see Figure 5 VCC = 4.5 V; CL = 50 pF [1] tpd is the same as tPLH and tPHL [2] tt is the same as tTLH and tTHL [3] VI = GND to VCC  1.5 V [3] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL  VCC2  fo) = sum of the outputs. 12. Waveforms 9, Q$LQSXW 90 90 *1' W3/+ 92+  W3+/  Q