1N60PW

1N60PW, 1N60SW Schottky Barrier Diode PINNING Features • High reliability • Low forward voltage and reverse current PIN DESCRIPTION 1 Cathode 2 Anode 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol Applications For electronic calculator, etc. • Low current rectification and high speed switching • Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage VR 10 V Peak Forward Current IFM 150 mA Average Rectified Output Current IO 50 mA Surge Forward Current Isurge 500 mA Junction Temperature Tj 125 ℃ Tstg -55 to +125 ℃ Storage Temperature Range Characteristics (Ta = 25℃) Parameter Symbol Min. Max. Unit Reverse Voltage at IR = 100 µA VR 45 - V Forward Current at VF = 1 V IF 4 - mA IR - 50 100 µA η 55 - % Reverse Current at VR = 10 V 1N60PW 1N60SW Rectification efficiency at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz Pair Δ IF ≤ 6 mA at 1V, Δ IR ≤ 20 µA at 10 V SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：21/09/2013 Rev: 01 1N60PW, 1N60SW Forward Characteristics mA 30 IF 15 0 0.2 1.6 V V Reverse Characteristics uA 200 IR 100 0 25 50 V VR SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：21/09/2013 Rev: 01 1N60PW, 1N60SW PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 c A ∠ ALL ROUND HE A bp E D UNIT A bp c D E HE v ∠ mm 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 5 O SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：21/09/2013 Rev: 01