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BZT52C5V6S

BZT52C5V6S

  • 厂商:

    BLUECOLOUR(蓝彩电子)

  • 封装:

    SOD323

  • 描述:

    Vz=5.6V 5.2V~6V Izt=5mA P=200mW

  • 数据手册
  • 价格&库存
BZT52C5V6S 数据手册
SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52C75S ZENER DIODE FEATURES z Planar die construction z 200mW power dissipation on ceramic PCB z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version r PINNING DESCRIPTION 1 Cathode 2 Anode ou PIN 2 Top View Simplified outline SOD-323 and symbol bl u ec ol 1 Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Symbol Value Unit VF 0.9 V PD 200 mW Thermal Resistance from Junction to Ambient RθJA 625 Junction Temperature Tj Tstg ℃/W ℃ -55~+150 Storage Temperature Range Page 1 f 4 150 ℃ REV01: 09/2011 Electrical Characteristics(Ta = 25℃ unless otherwise specified ) Maximum Zener Impedance (Note 3) Zener Voltage Range (Note 2) TYPE Marking VZ@IZT Min(V) Max(V) 2.20 2.60 ZZT@IZT (mA) ZZK@IZK Ω IZK (mA) IR Test Current IZTC VR V mA Max 100 600 1.0 50 1.0 -3.5 0 5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 BZT52C7V5S WC 7.5 7.0 7.9 BZT52C8V2S WD 8.2 7.7 8.7 BZT52C9V1S WE 9.1 8.5 9.6 BZT52C10S WF 10 9.4 BZT52C11S WG 11 10.4 BZT52C12S WH 12 11.4 BZT52C13S WI 13 BZT52C15S WJ 15 BZT52C16S WK 16 BZT52C18S WL 18 BZT52C20S WM BZT52C22S BZT52C24S BZT52C27S BZT52C30S BZT52C33S BZT52C36S W0 2.4 BZT52C2V7S W1 2.7 2.5 BZT52C3V0S W2 3.0 BZT52C3V3S W3 3.3 BZT52C3V6S W4 BZT52C3V9S W5 BZT52C4V3S BZT52C4V7S BZT52C5V1S r Min 5 BZT52C2V4S μA Typical Temperature Coefficient @IZTC mV/℃ ou Nom(V) IZT Maximum Reverse Current (Note 2) 15 80 1.0 2 4.0 1.2 4.5 5 5 15 80 1.0 1 5.0 2.5 5.3 5 5 15 80 1.0 0.7 5.0 3.2 6.2 5 5 15 100 1.0 0.5 6.0 3.8 7.0 5 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43S WU 43 40.0 46.0 2.5 130 500 1.0 2.0 33.0 10.0 12.0 2.5 BZT52C47S WV 47 44.0 50.0 2.5 150 500 1.0 2.0 36.0 10.0 12.0 2.5 BZT52C51S WW 51 48.0 54.0 2.5 180 500 1.0 1.0 39.0 10.0 12.0 2.5 BZT52C56S WX 56 52.0 60.0 2.5 180 500 1.0 1.0 43.0 10.0 12.0 2.5 BZT52C62S WY 62 58.0 66.0 2.5 200 500 1.0 0.2 47.0 10.0 12.0 2.5 BZT52C68S WZ 68 64.0 72.0 2.5 250 500 1.0 0.2 52.0 10.0 12.0 2.5 BZT52C75S ZA 75 70.0 79.0 2.5 300 500 1.0 0.2 57.0 10.0 12.0 2.5 bl u ec ol 5 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. Page 2 f 4 REV01: 09/2011 Typical Characteristics 50 250 200 150 100 C3V3 C5V6 C4V7 C6V8 C6V2 C8V2 Test Current IZ 5.0mA 10 0 0 25 75 50 100 125 150 0 C18 ec C15 Test current IZ 2mA C22 bl u C27 Test current IZ 5mA C33 C36 20 30 10 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics IZ, ZENER CURRENT (mA) 0 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 Tj = 25°C C39 8 ol C12 10 2 r 10 C10 20 1 ou Tj = 25°C IZ, ZENER CURRENT (mA) 30 IZ, ZENER CURRENT (mA) C3V9 20 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 0 C2V7 30 50 0 Tj = 25°C 40 IZ, ZENER CURRENT (mA) PD, P OWERDISSIPATION(mW) 300 6 4 Test Current IZ 2mA 2 0 40 C43 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 10 C47 C51 C56 C62 Test Current IZ 2.5mA C68 C75 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics Page 3 f 4 REV01: 09/2011 PACKAGE OUTLINE Plastic surface mounted package; 2 leads bl u ec ol ou r SOD-323 Page 4 f 4 REV01: 09/2011
BZT52C5V6S 价格&库存

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BZT52C5V6S
    •  国内价格
    • 1+0.06760

    库存:0

    BZT52C5V6S
    •  国内价格
    • 10+0.04752
    • 50+0.04396
    • 200+0.04099
    • 600+0.03802
    • 1500+0.03564
    • 3000+0.03415

    库存:0