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PSMN1R1-30PL,127

PSMN1R1-30PL,127

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    SOT78

  • 描述:

    MOS管 N-channel Id=120A VDS=30V SOT78

  • 数据手册
  • 价格&库存
PSMN1R1-30PL,127 数据手册
PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications • • • • DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 338 W Tj junction temperature -55 - 175 °C - 1.1 1.3 mΩ - 1.5 1.8 mΩ [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; [2] Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 4.5 V; ID = 75 A; VDS = 15 V; - 37 - nC total gate charge Fig. 14; Fig. 15 - 118 - nC PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - - 1.9 J Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] [2] Vsup ≤ 30 V; RGS = 50 Ω; unclamped Continuous current is limited by package. Measured 3 mm from package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number PSMN1R1-30PL Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN1R1-30PL PSMN1R1-30PL PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 2 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 338 W ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 A VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A - 1609 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 120 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1609 A VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - 1.9 J [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] PSMN1R1-30PL Product data sheet Vsup ≤ 30 V; RGS = 50 Ω; unclamped Continuous current is limited by package. All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 3 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 03aa16 120 003a a f774 5 00 ID (A) Pder (%) 4 00 80 3 00 2 00 40 (1) 1 00 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Normalized total power dissipation as a function of mounting base temperature Fig. 2. 0 50 10 0 150 200 Tmb ( C) Continuous drain current as a function of mounting base temperature. 003a a f773 104 ID (A) 103 tp =10 ms Limit R DS on = VDS / ID 100 ms 102 1 ms DC 10 10 ms 100 ms 1 10-1 10-1 Fig. 3. 1 10 102 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.22 0.44 K/W PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 4 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf772 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 P 0.02 single shot 10 δ= t tp T -3 Fig. 4. 10-6 10-5 10-4 10-3 10-2 tp T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.3 1.7 2.2 V 0.5 - - V - - 2.5 V VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µA VDS = 30 V; VGS = 0 V; Tj = 175 °C - 250 500 µA VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA - 1.1 1.3 mΩ Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold voltage Fig. 10; Fig. 11 ID = 2 mA; VDS = VGS; Tj = 175 °C; Fig. 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance PSMN1R1-30PL Product data sheet VGS = 10 V; ID = 25 A; Tj = 25 °C; [1] Fig. 12 All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 5 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 25 A; Tj = 25 °C; - 1.2 1.4 mΩ - 2.1 2.5 mΩ - 1.5 1.8 mΩ f = 1 MHz - 1.1 - Ω ID = 75 A; VDS = 15 V; VGS = 10 V; - 243 - nC - 223 - nC ID = 75 A; VDS = 15 V; VGS = 4.5 V; - 118 - nC Fig. 14; Fig. 15 - 39 - nC Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 RG gate resistance Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 ID = 0 A; VDS = 0 V; VGS = 10 V; Fig. 14; Fig. 15 QGS gate-source charge QGS(th) pre-threshold gatesource charge - 22 - nC QGS(th-pl) post-threshold gatesource charge - 17 - nC QGD gate-drain charge - 37 - nC VGS(pl) gate-source plateau voltage VDS = 15 V; Fig. 14; Fig. 15 - 2.8 - V Ciss input capacitance VDS = 15 V; VGS = 0 V; f = 1 MHz; - 14850 - pF Coss output capacitance Tj = 25 °C; Fig. 16 - 2799 - pF Crss reverse transfer capacitance - 1215 - pF td(on) turn-on delay time VDS = 15 V; RL = 0.2 Ω; VGS = 4.5 V; - 95 - ns tr rise time RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C - 213 - ns td(off) turn-off delay time - 199 - ns tf fall time - 115 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 67 - ns Qr recovered charge VDS = 15 V - 123 - nC [1] PSMN1R1-30PL Product data sheet Measured 3 mm from package. All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 6 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 003aaf762 300 003aaf763 75 gfs (S) ID (A) 240 60 180 45 120 30 60 15 0 Fig. 5. 0 20 40 60 ID (A) 0 80 Forward transconductance as a function of drain current; typical values Fig. 6. 003aaf764 5 Tj = 175 ° C 0 1.2 1.8 2.4 V GS (V) 3 Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad011 300 ID (A) 250 RDSon (mΩ ) 4 0.6 Tj = 25 ° C 10 3 4.5 3.5 200 3 2.8 150 2 100 1 0 Fig. 7. 2.6 50 0 4 8 12 VGS (V) 0 16 Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN1R1-30PL Product data sheet Fig. 8. VGS (V) = 2.4 0 2 6 8 VDS (V) 10 Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 2 April 2014 4 © Nexperia B.V. 2017. All rights reserved 7 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 003aaf766 105 003aab271 10-1 ID (A) 10-2 C (pF) C iss 10-3 Crss 104 min typ 1 2 max 10-4 10-5 103 10-1 Fig. 9. 1 10 VGS (V) 10-6 102 Input and reverse transfer capacitances as a function of gate-source voltage; typical values VGS (th) (V) VGS (V) 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003a a c982 3 0 003aad012 10 RDSon (mΩ) 8 max 2 2.8 2.6 VGS (V) = 3 6 typ min 4 1 4.5 2 3.5 10 0 -60 0 60 120 Tj (°C) 0 180 Fig. 11. Gate-source threshold voltage as a function of junction temperature PSMN1R1-30PL Product data sheet 0 100 200 ID (A) 300 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 8 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 003a a f767 2 VDS a ID 1.5 VGS(pl) VGS(th) 1 VGS QGS1 0.5 QGS2 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj ( C) Fig. 14. Gate charge waveform definitions 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaf768 10 V GS (V) 8 003aaf769 105 C (pF) 24V 15V 6 Ciss 104 VDS = 6V Coss 4 Crss 103 2 0 0 100 200 Fig. 15. Gate-source voltage as a function of gate charge; typical values PSMN1R1-30PL Product data sheet 102 10-1 QG (nC) 300 1 10 V DS (V) 102 Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 9 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 003aaf770 75 IS (A) 60 45 30 Tj = 175 ° C 15 0 0 0.2 0.4 Tj = 25 °C 0.6 0.8 VSD (V) 1 Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 10 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. Package outline TO-220AB (SOT78) PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 11 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. PSMN1R1-30PL Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 12 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 13 / 14 PSMN1R1-30PL Nexperia N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 April 2014 PSMN1R1-30PL Product data sheet All information provided in this document is subject to legal disclaimers. 2 April 2014 © Nexperia B.V. 2017. All rights reserved 14 / 14
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