PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Motor control
Load switching
Server power supplies
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
30
V
-
-
100
A
-
-
114
W
-55
-
175
°C
-
3.5
4.1
mΩ
-
2.8
3.4
mΩ
-
8
-
nC
-
31
-
nC
-
-
200
mJ
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Tj
junction temperature
[1]
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 13
[2]
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 30 V;
RGS = 50 Ω; unclamped
PSMN3R4-30PL
Nexperia
N-channel 30 V 3.4 mΩ logic level MOSFET
[1]
Continuous current is limited by package.
[2]
Measured 3 mm from package.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN3R4-30PL
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
30
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
30
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
[1]
-
100
A
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1]
-
100
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C;
see Figure 3
-
609
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
114
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
100
A
Source-drain diode
[1]
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
609
A
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
200
mJ
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
EDS(AL)S
[1]
Continuous current is limited by package.
003aad359
200
ID
(A)
03aa16
120
Pder
(%)
150
80
(1)
100
40
50
0
0
0
Fig 1.
50
100
150
Tmb (°C)
200
Continuous drain current as a function of
mounting base temperature
PSMN3R4-30PL
Product data sheet
0
50
100
150
200
Tmb (°C)
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
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N-channel 30 V 3.4 mΩ logic level MOSFET
003aad383
103
10 μs
ID
(A)
Limit RDSon = VDS / ID
102
100 μs
(1)
DC
10
1 ms
10 ms
100 ms
1
10-1
Fig 3.
1
10
VDS (V)
102
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 4
-
0.65
1
K/W
003aad007
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10-1 0.1
0.05
0.02
10-2
δ=
P
tp
T
10-3
single shot
t
tp
T
10-4
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
6. Characteristics
Table 6.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
30
-
-
V
Static characteristics
V(BR)DSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
27
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
1.3
1.7
2.15
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
0.5
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
-
-
2.45
V
µA
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
0.3
5
VDS = 30 V; VGS = 0 V; Tj = 125 °C
-
-
100
µA
IGSS
gate leakage current
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12
-
-
6.46
mΩ
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
3.5
4.1
mΩ
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 12
-
-
6.1
mΩ
VGS = 4.5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
-
-
7.79
mΩ
-
2.8
3.4
mΩ
f = 1 MHz
-
1
-
Ω
ID = 25 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
-
64
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
58
-
nC
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
-
31
-
nC
-
12
-
nC
RDSon
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
RG
gate resistance
[1]
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
pre-threshold gate-source
charge
-
6.2
-
nC
QGS(th-pl)
post-threshold gate-source
charge
-
5.8
-
nC
QGD
gate-drain charge
-
8
-
nC
VGS(pl)
gate-source plateau voltage
VDS = 15 V; see Figure 14;
see Figure 15
-
2.8
-
V
Ciss
input capacitance
-
3907
-
pF
Coss
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
822
-
pF
Crss
reverse transfer capacitance
-
356
-
pF
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
Table 6.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
-
40
-
ns
tr
rise time
VDS = 12 V; RL = 0.5 Ω;
VGS = 4.5 V; RG(ext) = 4.7 Ω
-
73
-
ns
td(off)
turn-off delay time
-
59
-
ns
tf
fall time
-
28
-
ns
-
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 12 V
[1]
-
36
-
ns
-
28
-
nC
Measured 3 mm from package.
003aad413
120
ID
(A)
10
4.5
3.5
003aad419
7000
C
(pF)
6000
Ciss
90
VGS (V) = 3
5000
60
4000
Crss
2.8
3000
30
2.6
2000
2.4
0
1000
0
Fig 5.
1
2
3
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN3R4-30PL
Product data sheet
0
4
Fig 6.
3
6
9
VGS (V)
12
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
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PSMN3R4-30PL
Nexperia
N-channel 30 V 3.4 mΩ logic level MOSFET
003aad420
160
gfs
(S)
RDSon
(mΩ)
120
9
80
6
40
3
0
0
0
Fig 7.
20
40
60
80
ID (A)
100
Forward transconductance as a function of
drain current; typical values
003aad415
100
0
Fig 8.
ID
(A)
10-2
60
10-3
40
10-4
Tj = 175 °C
20
5
10
15
VGS (V)
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aab271
10-1
ID
(A)
80
min
typ
1
2
max
10-5
Tj = 25 °C
10-6
0
0
Fig 9.
003aad421
12
1
2
3 V (V) 4
GS
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN3R4-30PL
Product data sheet
0
VGS (V)
3
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
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Nexperia
N-channel 30 V 3.4 mΩ logic level MOSFET
003a a c982
3
03aa27
2
a
VGS (th)
(V)
max
1.5
2
typ
1
min
1
0.5
0
-60
0
60
120
Tj (°C)
180
Fig 11. Gate-source threshold voltage as a function of
junction temperature
0
−60
0
60
120
Tj (°C)
180
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad414
12
VGS (V) = 2.8
RDSon
(mΩ)
VDS
3
ID
9
VGS(pl)
VGS(th)
6
3.5
VGS
4.5
QGS1
3
QGS2
QGS
10
QGD
QG(tot)
003aaa508
0
0
20
40
60
80
ID (A)
100
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN3R4-30PL
Product data sheet
Fig 14. Gate charge waveform definitions
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PSMN3R4-30PL
Nexperia
N-channel 30 V 3.4 mΩ logic level MOSFET
003aad417
10
VGS
(V)
003aad418
104
6V
C
(pF)
8
Ciss
24 V
6
VDS = 15 V
103
4
Coss
Crss
2
102
10-1
0
0
20
40
60 Q (nC) 80
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
1
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad416
100
IS
(A)
80
60
40
Tj = 175 °C
20
Tj = 25 °C
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 18. Package outline SOT78 (TO-220AB)
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN3R4-30PL v.1
20101102
Product data sheet
-
-
PSMN3R4-30PL
Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
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Product data sheet
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N-channel 30 V 3.4 mΩ logic level MOSFET
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
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N-channel 30 V 3.4 mΩ logic level MOSFET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
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9.1
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©
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 02 November 2010