BUK7610-55AL,118

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Stable operation in linear mode „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V and 24 V loads „ DC linear motor control „ Automotive systems „ Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 4 and 1 Ptot total power dissipation Min Typ Max Unit - - 75 A Tmb = 25 °C; see Figure 2 - - 300 W ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load - - 1.1 J VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - 8.5 10 mΩ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon [1] drain-source on-state resistance Continuous current is limited by package. BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol D mb G mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number BUK7610-55AL Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 55 V VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current - 55 V -20 20 V Tmb = 25 °C; VGS = 10 V; see Figure 4 and 1 [1][2] - 122 A Tmb = 25 °C; VGS = 10 V; see Figure 4 and 1 [3] - 75 A Tmb = 100 °C; VGS = 10 V; see Figure 4 [3] - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed - 490 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 300 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 1.1 J - - J 122 A 490 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [4][5] [6] Source-drain diode IS ISM source current peak source current Tmb = 25 °C [1][2] - Tmb = 25 °C [3] - tp ≤ 10 μs; pulsed; Tmb = 25 °C © BUK7610-55AL_2 Product data sheet - Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 2 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET [1] Current is limited by power dissipation chip rating. [2] Refer to document 9397 750 12572 for further information. [3] Continuous current is limited by package. [4] Single shot avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information. 003aaa726 150 03aa16 120 ID (A) Pder (%) 100 80 (1) 50 40 0 0 0 50 100 150 Tmb (°C) 200 0 VGS • 10 V 50 P der = (1) Capped at 75 A due to package. Fig 1. Continuous drain current as a function of mounting base temperature P tot P tot (25°C ) 100 150 Tmb (°C) 200 × 100 % Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aaa739 102 (1) IAV (A) (2) Tj = 25 ˚C 10 150 ˚C (3) 1 10-1 10-2 10-1 1 tAV (ms) 10 (1) Singleíshot. (2) Singleíshot. (3) Repetitive. Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of a © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 3 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 003aaa737 103 Limit RDSon = VDS / ID ID (A) tp = 10 μ s 100 μ s 102 (1) 1 ms DC 10 ms 10 100 ms 1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse (1) Capped at 75 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint; vertical in still air - 50 - K/W Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 0.25 0.5 K/W © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 4 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 003aaa734 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 μA; VGS = 0 V; Tj = -55 °C 50 - - V ID = 250 μA; VGS = 0 V; Tj = 25 °C 55 - - V 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 and 11 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 and 11 - - 4.4 V VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 μA VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 μA VDS = 0 V; VGS = +20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 and 13 - - 20 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - 8.5 10 mΩ Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain-source breakdown voltage gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; voltage see Figure 10 and 11 drain leakage current gate leakage current drain-source on-state resistance © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 5 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET Table 6. Symbol Characteristics …continued Parameter Conditions Min Typ Max Unit IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 - 0.85 1.2 V Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 73 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/μs; VGS = 0 V; VDS = 30 V; Tj = 25 °C - 430 - nC Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 124 - nC QGS gate-source charge ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 22 - nC QGD gate-drain charge ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 50 - nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 14 - 5 - V Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 4710 6280 pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 980 1180 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 - 560 770 pF td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 33 - ns tr rise time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 117 - ns td(off) turn-off delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 132 - ns tf fall time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C - 95 - ns LD internal drain inductance from upper edge of drain mounting base to center of die; Tj = 25 °C - 2.5 - nH LS internal source inductance from source lead to source bond pad; Tj = 25 °C - 7.5 - nH © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 6 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 003aaa729 400 ID (A) 8 9 10 15 VGS (V) = 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 200 100 0 0 7 RDSon (mΩ) 20 18 16 14 12 300 003aaa731 20 2 4 6 10 VGS (V) = 20 5 0 8 VDS (V) 10 0 T j = 25 °C 100 200 300 ID (A) 400 T j = 25 °C Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 003aaa732 40 gfs (S) Fig 7. Drain-source on-state resistance as a function of drain current; typical values 003aaa733 150 ID (A) 35 100 30 50 25 Tj = 175 °C 20 Tj = 25 °C 0 0 20 40 60 ID (A) 80 T j = 25 °C; VDS = 25 V 0 4 6 8 10 VGS (V) VDS = 25 V Fig 8. Forward transconductance as a function of drain current; typical values Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values © BUK7610-55AL_2 Product data sheet 2 Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 7 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 2 min 10−2 max typ 10−3 min 10−4 typ max 10−5 1 0 −60 0 60 120 180 10−6 0 Tj (°C) 2 4 6 VGS (V) ID = 1 m A; VDS = VGS T j = 25 °C; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aaa730 18 03ne89 2 a RDSon (mΩ) 1.5 14 1 10 0.5 6 5 10 15 VGS (V) 20 T j = 25 °C; ID = 25 A 0 -60 a= Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values 60 120 Tj (°C) 180 R DSon R DSon (25°C ) Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature © BUK7610-55AL_2 Product data sheet 0 Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 8 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 003aaa735 10 003aaa738 8000 VGS (V) C (pF) Ciss 8 6000 VDS = 14 V VDS = 44 V 6 Coss 4000 4 C rss 2000 2 0 0 50 100 QG (nC) 0 10-1 150 T j = 25 °C; ID = 25 A 1 10 VDS (V) 102 VGS = 0 V ; f = 1 M H z Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aaa736 150 IS (A) 100 Tj = 25 °C 50 Tj = 175 °C 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 9 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 17. Package outline SOT404 (D2PAK) © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 10 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7610-55AL_2 20080109 Product data sheet - BUK75_7610_55AL_1 Modifications: BUK75_7610_55AL_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Typical thermal resistance (j-mb) figure added in Table 5. 20041022 Product data sheet - © BUK7610-55AL_2 Product data sheet - Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 11 of 13 BUK7610-55AL Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com © BUK7610-55AL_2 Product data sheet Rev. 02 — 9 January 2008 Nexperia B.V. 2017. All rights reserved 12 of 13 Nexperia BUK7610-55AL N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 09 January 2008