NJW0302G

SPTECH Product Specification SPTECH Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281G APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VCEX Collector-Emitter Voltage VEB= 5V -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -1.5 A PT Total Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W SPTECH website：www.superic-tech.com 1 MJW0302G SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJW0302G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB=- 1A -0.6 V VBE(on) Base-Emitter On Voltage IC= -8A;VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB=- 250V -50 mA ICEO Collector Cutoff Current VCE=- 250V -50 mA IEBO Emitter Cutoff Current VEB=- 5V -5 mA hFE-1 DC Current Gain IC= -0.1A; VCE=-5V 75 150 hFE-2 DC Current Gain IC= -1A; VCE= -5V 75 150 hFE-3 DC Current Gain IC= -3A; VCE= -5V 75 150 hFE-4 DC Current Gain IC=- 5A; VCE= -5V 45 hFE-5 DC Current Gain IC=- 8A; VCE= -5V 15 SPTECH website：www.superic-tech.com 2 MIN TYP. MAX -250 UNIT V