D44VH10

SPTECHProduct Specification D44VH10 SPTECH Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 15 A ICM Collector current-Peak 20 A PD Total power dissipation TC=25℃ 83 Ta=25℃ 0.67 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case SPTECHProduct Specification D44VH10 SPTECH Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0, VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V ICES Collector cut-off current VCE=60V; VBE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=1V 35 hFE-2 DC current gain IC=4A ; VCE=1V 20 fT Transition frequency IC=0.5A ; VCE=10V 50 MHz Ccb Collector capacitance f=1MHz ; VCB=10V 130 pF 0.3 μs 0.5 μs 0.14 μs 60 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=0.5A 2 SPTECHProduct Specification SPTECH Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 D44VH10 SPTECHProduct Specification SPTECH Silicon NPN Power Transistors 4 D44VH10 SPTECHProduct Specification SPTECH Silicon NPN Power Transistors 5 D44VH10