2SD718

SPTECH Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB688 APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range 2SD718 SPTECH Product Specification 2SD718 SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 170 pF Current-Gain—Bandwidth Product IC= 1A; VCE= 5V;ftest= 1.0MHz 12 MHz fT  hFE Classifications R O 55-110 80-160 SPTECH website：www.superic-tech.com CONDITIONS MIN TYP. MAX 120 UNIT V 55 160