SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC5299
DESCRIPTION
·High Breakdown Voltage: V(BR)CBO= 1500V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
25
A
Collector Power Dissipation
@ Ta=25℃
3.0
Collector Power Dissipation
@ TC=25℃
70
Junction Temperature
150
℃
-55~150
℃
PC
TJ
Tstg
Storage Temperature Range
W
SPTECH website:www.superic-tech.com
1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC5299
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 2A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
10
μA
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
1.0
mA
hFE-1
DC current gain
IC= 1A ; VCE= 5V
20
30
hFE-2
DC current gain
IC= 8A ; VCE= 5V
4
7
800
UNIT
V
Switching times
tstg
tf
Storage Time
Fall Time
IC= 6A , IB1= 1.2A; IB2= -2.4A
RL= 50Ω; VCC= 200V
SPTECH website:www.superic-tech.com
3.0
μs
0.2
μs
2
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