SPT40N120T1B

SPT40N120T1B 1200V /40A Trench Field Stop IGBT FEATURES  High breakdown voltage to 1200V for VCE 1200 V IC 40 A VCE(SAT) IC=40A 1.7 V improved reliability  Trench-Stop Technology offering :  very tight parameter distribution  high ruggedness, temperature stable behavior  Short circuit withstand time – 10s  High ruggedness, temperature stable  Low VCE(SAT)  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche capability APPLICATION  Frequency Converters  Motor Drive http://www.superic-tech.com 1 2018.06 / Rev3.3 SPT40N120T1B Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage VCE 1200 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 80 40 A Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C IF 80 40 A Pulsed Collector Current, limited by Tjmax ICpuls 160 A Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C - 160 A Diode Pulsed Current, limited by Tjmax IFpuls 160 A Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V Tsc 10 μs Power dissipation , Tj=25℃ Ptot 416 W Operating junction temperature Tj -40...+150 °C Storage temperature Ts -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s - 260 °C Thermal Resistance Parameter Symbol Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.3 K/W Diode thermal resistance, junction - case Rθ(j-c) 0.6 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.superic-tech.com 2 2018.06 / Rev3.3 SPT40N120T1B Electrical Characteristics of the IGBT（Tj= 25℃ unless otherwise specified）： Parameter Symbol Conditions Min. Typ. Max. Unit Static Collector-Emitter breakdown voltage BVCES VGE=0V , IC=250μA 1200 1300 - V Gate threshold voltage VGE(th) VGE=VCE, IC=250μA 5.1 5.8 6.4 V Collector-Emitter Saturation voltage VCE(sat) VGE=15V, IC=40A Tj = 25°C Tj = 150°C - 1.7 2.1 2.1 - V Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V Tj = 25°C Tj = 150°C - - 10 2500 μA Gate-emitter leakage current IGES VCE = 0V, VGE = 20V - - 100 nA Transconductance gfs VCE=20V, IC=15A - 15 - S Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current IC（SC） http://www.superic-tech.com - 4400 - - 180 - - 100 - VCC = 960V, IC = 40A, VGE = 15V - 270 - nC VGE=15V,tSC≤10us VCC=600V, Tj，start=25°C - 240 - A VCE = 25V, VGE = 0V, f = 1MHz 3 2018.06 / Rev3.3 pF SPT40N120T1B Switching Characteristic, Inductive Load Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic , at Tj = 25°C Turn-on delay time td(on) - 55 - ns tr - 20 - ns - 2.4 - mJ - 230 - ns tf - 160 - ns Eoff - 1.5 - mJ Rise time Turn-on energy Turn-off delay time Eon td(off) Fall time Turn-off energy VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12Ω Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min. Typ. Max. Unit Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.superic-tech.com IF = 40A IF= 40A, VR = 600V, di/dt= 400A/μs, 4 - 3.5 - V - 190 - ns - 6 - A - 530 - nC 2018.06 / Rev3.3 SPT40N120T1B Fig. 1 FBSOA characteristics Fig. 2 Load Current vs. Frequency 160 140 100 110℃ 120 tP = 10μs 100 50μs 10 IC(A) IC(A) 100μs 500μs 1ms 80 60 DC 1 80℃ 40 20 Ta=25℃, Tj ≤150℃ , VGE=15V 0.1 D=0.5, VCE=600V, VGE=0/15V, Rg=12Ω，Tj ≤150℃ 0 1 10 100 1000 1 10 VCE(V) 100 f (KHz) Fig. 3 Power dissipation as a function of TC Fig. 4 Short circuit time and current vs.VGE 450 260 400 240 350 220 300 200 250 180 TSC(us) 70 Isc Tsc ISC (A) Ptot(W) 60 200 50 40 160 150 140 100 120 50 100 30 20 Tj ≤150C Ta=25° C,Vcc=600V 80 0 25 50 75 100 125 150 9 TC(℃) http://www.superic-tech.com 10 11 12 13 14 15 10 16 VGE(V) 5 2018.06 / Rev3.3 SPT40N120T1B Fig. 5 Output characteristics Fig. 6 Saturation voltage characteristics 90 90 VGE = 20V 80 80 150℃ 17V 70 25℃ 70 15V 13V 60 60 11V 9V 50 IC(A) IC(A) 50 7V 40 40 30 30 20 20 10 10 0 0 VGE = 15V 0 1 2 3 4 5 0 1 2 VCE(V) 3 4 5 6 VCE(V) Fig. 7 Switching times vs. gate resistor Fig. 8 Switching times vs. collector current 1000 1000 t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr 100 100 10 td(off) tf td(on) tr Common Emitter VCC = 600V, VGE = 15V, IC=40A Ta=25℃ Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ 1 10 0 5 10 15 20 25 30 35 40 45 10 20 30 40 50 60 70 80 90 IC(A) Rg (Ω) http://www.superic-tech.com 0 6 2018.06 / Rev3.3 SPT40N120T1B Fig. 9 Switching loss vs. gate resistor Fig. 10 Switching loss vs. collector current 4.5 12 Eoff Eon Eoff Eon 4 Common Emitter VCC = 600V, VGE = 15V, RG=12Ω Ta=25℃ 10 3 Switching loss (mJ) Switching loss (mJ) 3.5 2.5 2 1.5 8 6 4 1 2 Common Emitter VCC = 600V, VGE = 15V, IC=40A Ta=25℃ 0.5 0 0 0 5 10 15 20 25 30 35 40 45 0 10 20 30 Rg (Ω) 40 50 60 70 80 90 Ic (A) Fig. 11 Gate charge characteristics Fig. 12 Capacitance characteristics 10000 15 240V 600V 960V 12 Ciss(pF) Coss(pF) 1000 Crss(pF) Capacitance VGE (V) 9 6 100 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ Common Emitter IC= 40A ,Ta=25℃ 0 10 0 50 100 150 200 250 300 10 20 VCE(V) Qg (nC) http://www.superic-tech.com 0 7 2018.06 / Rev3.3 30 SPT40N120T1B http://www.superic-tech.com 8 2018.06 / Rev3.3